DESCRIPTION

· The MR1A16A is a 2,097,152-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 16 bits.

· It offers SRAM compatible 35 ns read/write timing with unlimited endurance.

· Data is non-volatile for over 20 years and automatically protected on power loss by low-voltage inhibit circuitry.

· Available in 48-pin BGA and 44-pin TSOP2 packages, compatible with low-power SRAM and other nonvolatile RAM products.

FEATURES

· Fast 35 ns Read/Write cycle.

· SRAM compatible timing, uses existing SRAM controllers without redesign.

· Unlimited Read & Write endurance.

· Data non-volatile for >20 years at temperature.

· 3.3 volt power supply.

· Automatic data protection on power loss.

· Commercial, Industrial, Extended temperatures.

· AEC-Q100 Grade 1 option.

· All products meet MSL-3 moisture sensitivity level.

· RoHS-compliant SRAM TSOP2 and BGA Packages.

APPLICATIONS

· Ideal for applications requiring permanent storage and quick retrieval of critical data and programs.

· Replaces Flash, SRAM, EEPROM, and BBSRAM in systems for simpler, more efficient design.

· Replaces battery-backed SRAM solutions with MRAM to improve reliability.