Everspin Technologies Inc. MR25H10CDF

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  • Part Number:

    MR25H10CDF

  • Manufacturer:

    Everspin Technologies Inc.

  • Category:

    Memory

  • RoHs:

    rohs RoHS Compliant

  • Datasheet:

    pdf MR25H10CDF_Datesheet

  • Description:

    IC RAM 1MBIT SPI 40MHZ 8DFN

  • In stock 2,521
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Specifications
Type
Paramete
Type
Paramete
Qualification
-
Access Time
-
Package / Case
8-VDFN Exposed Pad
Supplier Device Package
8-DFN-EP, Small Flag (5x6)
Grade
-
Memory Type
Non-Volatile
Voltage - Supply
2.7V ~ 3.6V
Memory Organization
128K x 8
Write Cycle Time - Word, Page
-
Memory Format
RAM
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 85°C (TA)
Memory Interface
SPI
Clock Frequency
40 MHz
Technology
MRAM (Magnetoresistive RAM)
Memory Size
1Mbit
Overview

DESCRIPTION



· The MR25H10 is a 1Mb magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits.

· It offers serial EEPROM and Flash compatible read/write timing with no write delays and unlimited read/write endurance.

· Available in 8-pin DFN or 8-pin DFN Small Flag RoHS-compliant packages.

· Direct replacement for serial EEPROM, Flash, and FeRAM.



FEATURES



· No write delays and unlimited write endurance.

· Data retention greater than 20 years.

· Automatic data protection on power loss and block write protection.

· Fast SPI interface with up to 40 MHz clock rate.

· Power supply range from 2.7 to 3.6 Volts with low current sleep mode.

· Industrial temperature range (-40° to +85 °C) and AEC-Q100 Grade 1 option (-40°C to +125 °C).



APPLICATIONS



· Ideal for applications requiring quick data and program storage and retrieval with minimal I/O pins.

· Suitable for industrial environments with wide temperature ranges.

· Compatible with systems using serial EEPROM, Flash, and FeRAM.

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IMPORTANT NOTICE

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Shipping Rate

We ship orders once a day around 5 p.m., except Sunday. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.

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