DESCRIPTION

· The MR4A08B is a 16,777,216-bit MRAM device organized as 2,097,152 words of 8 bits.

· It offers SRAM compatible 35ns read/write timing with unlimited endurance.

· Data is non-volatile for over 20 years and protected on power loss by low-voltage inhibit circuitry.

· Available in 44-lead TSOP type-II and 48-pin BGA packages.

· Operates in commercial (0 to +70 °C) and industrial (-40 to +85 °C) temperature ranges.

FEATURES

· +3.3 Volt power supply.

· Fast 35 ns read/write cycle.

· SRAM compatible timing.

· Unlimited read & write endurance.

· Data non-volatile for >20 years.

· RoHS-compliant BGA and TSOP2 packages.

· Meets MSL-3 moisture sensitivity level.

APPLICATIONS

· Ideal for applications requiring permanent storage and quick retrieval of critical data and programs.

· Replaces FLASH, SRAM, EEPROM, and BBSRAM in systems for simpler, more efficient designs.

· Improves reliability by replacing battery-backed SRAM.