onsemi NSBC143TPDXV6T5G

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  • Part Number:

    NSBC143TPDXV6T5G

  • Manufacturer:

    onsemi

  • Category:

    Bipolar Transistor Arrays, Pre-Biased

  • RoHs:

    rohs Non-RoHS Compliant

  • Datasheet:

    pdf NSBC143TPDXV6T5G_Datesheet

  • Description:

    TRANS PREBIAS NPN/PNP SOT563

  • In stock 0
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Specifications
Type
Paramete
Type
Paramete
Frequency - Transition
-
Resistor - Base (R1)
4.7kOhms
Supplier Device Package
SOT-563
Current - Collector (Ic) (Max)
100mA
Grade
-
Current - Collector Cutoff (Max)
500nA
Package / Case
SOT-563, SOT-666
Voltage - Collector Emitter Breakdown (Max)
50V
Power - Max
500mW
Vce Saturation (Max) @ Ib, Ic
250mV @ 300µA, 10mA
Resistor - Emitter Base (R2)
-
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 5mA, 10V
Mounting Type
Surface Mount
Qualification
-
Overview

DESCRIPTION

· The NSBC114EPDXV6 series features dual bias resistor transistors (BRT) with integrated monolithic bias networks, combining NPN and PNP silicon transistors with series base and base-emitter resistors.

· Designed to replace individual transistors and external resistor bias networks, these devices simplify circuit design and reduce component count.

· Housed in the SOT-563 package, they are ideal for low-power surface mount applications where board space is limited.



FEATURES

· Simplifies circuit design by integrating bias resistors into a single device.

· Reduces board space and component count, enhancing efficiency in compact designs.

· Available in Pb-free packages and supplied in 8 mm, 7-inch tape and reel formats for automated assembly.



APPLICATIONS

· Suitable for low-power surface mount applications where space optimization is critical.

· Ideal for replacing discrete transistor and resistor combinations in digital circuits.

· Used in compact electronic devices requiring efficient thermal management and minimal component footprint.



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