NXP NVT2006BSHP

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  • Part Number:

    NVT2006BSHP

  • Manufacturer:

    NXP

  • Category:

    Translators, Level Shifters

  • RoHs:

    rohs RoHS Compliant

  • Datasheet:

    pdf NVT2006BSHP_Datesheet

  • Description:

    IC TRANSLATOR BIDIR 16DHVQFN

  • In stock 0
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Specifications
Type
Paramete
Type
Paramete
Data Rate
-
Supplier Device Package
16-DHVQFN (2.5x3.5)
Channel Type
Bidirectional
Operating Temperature
-40°C ~ 85°C (TA)
Package / Case
16-VFQFN Exposed Pad
Channels per Circuit
6
Voltage - VCCB
1.8 V ~ 5.5 V
Features
Auto-Direction Sensing
Grade
-
Output Type
Open Drain, Push-Pull
Mounting Type
Surface Mount
Qualification
-
Input Signal
-
Voltage - VCCA
1 V ~ 3.6 V
Number of Circuits
1
Translator Type
Voltage Level
Output Signal
-
Overview

DESCRIPTION

· The NVT2003/06 is a bidirectional voltage-level translator for open-drain and push-pull applications, operating from 1.0 V to 3.6 V (V ref(A)) and 1.8 V to 5.5 V (V ref(B)).

· It enables bidirectional voltage translations between 1.0 V and 5 V without requiring a direction pin.

· The device supports bit widths from 3-bit to 6-bit, with transmission speeds < 33 MHz for open-drain systems.

· It features low ON-state resistance (R on) for minimal propagation delay and seamless voltage translation.

· The EN input controls the translator switch, ensuring high-impedance state when LOW.

FEATURES

· Bidirectional voltage translation without a direction pin.

· Maximum propagation delay of less than 1.5 ns.

· Supports voltage level translation between various V ref(A) and V ref(B) combinations.

· Low 3.5 Ω ON-state connection for reduced signal distortion.

· 5 V tolerant I/O ports for mixed-mode signal operation.

· High-impedance An and Bn pins when EN is LOW.

APPLICATIONS

· Open-drain and push-pull voltage level translation.

· Mixed-mode signal operation in systems with varying voltage levels.

· Applications requiring bidirectional data flow without direction control.

· Systems needing minimal propagation delay and low signal distortion.

· Protection of lower voltage devices with ESD protection.

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