Mini-Circuits PHA-1H+

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  • Part Number:

    PHA-1H+

  • Manufacturer:

    Mini-Circuits

  • Category:

    RF Amplifiers

  • RoHs:

    rohs Non-RoHS Compliant

  • Datasheet:

  • Description:

    RF Amplifier IC CATV, DBS, LTE, MMDS, Wireless LAN 50MHz ~ 6GHz SOT-89

  • In stock 0
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Overview

PHA-1H+ – Complete Datasheet Summary


1. Basic Identification


  • Full Part Number: PHA-1H+
  • Manufacturer: Mini-Circuits
  • Device Type: Ultra-High Dynamic Range Monolithic Amplifier
  • Technology: E-pHEMT (Enhancement-mode Pseudomorphic HEMT)
  • Impedance: 50 Ω
  • Frequency Range: 0.05 GHz to 6.0 GHz
  • Package: SOT-89 (Case Style DF782), exposed paddle
  • Compliance: RoHS Compliant, matte tin lead finish
  • Revision: Rev. C
  • ESD Rating: HBM Class 1B (500 to <1000 V); MM Class M1 (25 V)
  • Moisture Sensitivity: MSL1
  • Marking: PH1H

2. Key Features


  • Ultra-high linearity: +40.4 dBm typical OIP3 at 2.4 GHz
  • High output power: +22.6 dBm P1dB typical at 2 GHz
  • Low noise figure: 2.2 dB typical at 2 GHz
  • Wideband: 50 MHz to 6 GHz (cellular, PCS, LTE, WiMAX, microwave)
  • No external matching components required
  • Low additive phase noise: -164.1 dBc/Hz @ 10 kHz offset (2 GHz)
  • Operable from +4.0 V to +5.2 V
  • Excellent thermal reliability
  • Drop-in compatible for WJ AH1a/b replacement

3. Electrical Specifications (@ +25 °C, 50 Ω, VD = +5.0 V)


Gain


FrequencyMinTypMaxUnit
0.05 GHz15.917.719.5dB
0.8 GHz14.315.917.5dB
2.0 GHz13.8dB
4.0 GHz9.810.912.0dB
6.0 GHz9.6dB

Noise Figure


FrequencyTypUnit
0.5 GHz1.7dB
1.0 GHz1.8dB
2.0 GHz2.2dB
4.0 GHz2.6dB
6.0 GHz3.4dB

Linearity & Output Power


ParameterFrequencyTypUnit
Output Power @ 1 dB Compression2.0 GHz+22.6dBm
Output IP32.0 GHz+40.4dBm
2.4 GHz+40.4dBm
4.0 GHz+41.4dBm

Return Loss & Isolation


ParameterFrequencyTypUnit
Input Return Loss0.8 GHz18.2dB
2.0 GHz12.5dB
Output Return Loss0.8 GHz22.9dB
2.0 GHz19.7dB
Reverse Isolation2.0 GHz19.6dB

Electrical Characteristics


  • Supply Voltage: +4.8 V to +5.2 V
  • Supply Current: 132 mA typical, 165 mA max
  • Additive Phase Noise (2 GHz, 10 kHz offset): -164.1 dBc/Hz
  • Thermal Resistance (junction-to-ground lead): 36.1 °C/W

4. Absolute Maximum Ratings


ParameterRating
Operating Temperature-40 °C to +105 °C
Storage Temperature-65 °C to +150 °C
DC Supply Voltage (Pin 3)+6 V
Max Input CW Power+24 dBm
Power Dissipation1 W
Operating Current at 5 V210 mA

5. Pin Configuration (SOT-89)


PinNameFunction
1RF-INRF input (DC blocking required)
2GNDGround
3RF-OUT & DC-INRF output + DC bias supply
4GNDGround

6. Recommended Application Circuit


  • DC blocking capacitor on input/output
  • RF choke for bias injection
  • Bypass capacitors for supply stability
  • Evaluation Board: TB-545-1H+
  • PCB Layout: PL-313

7. Packaging & Ordering


  • Package: DF782 (SOT-89)
  • Tape-and-reel: 7-inch reels available (20, 50, 100, 200, 500, 1000 pcs)

8. Typical Applications


  • Base station infrastructure
  • Portable wireless & LTE systems
  • CATV, DBS, MMDS, WLAN
  • High-dynamic-range receivers
  • Driver amplifiers in linearized transmitters
  • Low-phase-noise LO buffer amplifiers


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