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NXP PMBFJ177,215
RoHS Compliant
PMBFJ177,215_Datesheet
DESCRIPTION
· Silicon symmetrical p-channel junction FETs in SOT23 packages.
· Designed for SMD technology applications.
· Drain and source connections are interchangeable.
FEATURES
· Drain-source voltage (VDS) up to 30V.
· Gate-source voltage (VGSo) up to 30V.
· Gate current (IG) up to 50mA.
· Total power dissipation (Ptot) up to 300mW at 25°C.
· Drain current (IDSS) varies by model: PMBFJ174 (20-135mA), PMBFJ175 (7-70mA), PMBFJ176 (2-35mA), PMBFJ177 (1.5-20mA).
· Drain-source ON-resistance (RDS on) varies by model: PMBFJ174 (85Ω), PMBFJ175 (125Ω), PMBFJ176 (250Ω), PMBFJ177 (300Ω).
APPLICATIONS
· Analog switches.
· Choppers.
· Commutators.
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