DESCRIPTION

· The S25FL128P is a 3.0V (2.7V to 3.6V) single-power-supply Flash memory device with 128Mb capacity.

· It consists of 64 sectors of 256KB or 256 sectors of 64KB memory.

· Designed for in-system programming with a standard 3.0V VCC supply.

· Supports Page Program, Sector Erase, and Bulk Erase commands.

· Internally generated and regulated voltages for program operations.

FEATURES

· Single power supply operation: 2.7V to 3.6V for read and program operations.

· Memory Architecture: 128Mb uniform 256KB or 64KB sectors.

· Program: Page Program up to 256 bytes in 1.5ms (typical).

· Erase: 2s typical for 256KB sector, 0.5s for 64KB sector, 128s for bulk erase.

· Cycling Endurance: 100,000 cycles per sector typical.

· Data Retention: 20 years typical.

· Device ID: RDID, READ_ID, and RES commands for manufacturer and device ID.

· Process Technology: 0.09 µm MirrorBit® process.

· Package Options: 16-pin SO package and 8-Contact WSON Package.

· Speed: 104 MHz clock rate (maximum).

· Power Saving: Standby Mode 200µA (max), Deep Power Down Mode 3µA (typical).

· Memory Protection: WP#/ACC pin with Status Register Bits for memory protection.

· SPI Bus Compatible Serial Interface.

· x8 Parallel Programming Mode (for 16-pin SO package only).

APPLICATIONS

· Suitable for systems requiring reliable, high-density Flash memory with low power consumption.

· Ideal for applications needing in-system programming and memory protection features.

· Used in devices requiring fast program and erase times with high endurance and data retention.