STMicroelectronics STG3699BVTR

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Specifications
Type
Paramete
Type
Paramete
Channel Capacitance (CS(off), CD(off))
5pF
Qualification
-
Mounting Type
Surface Mount
Supplier Device Package
16-QFN (2.6x1.8)
Switch Circuit
SPDT
Voltage - Supply, Single (V+)
1.65V ~ 4.3V
Grade
-
Multiplexer/Demultiplexer Circuit
2:1
Charge Injection
57pC
On-State Resistance (Max)
500mOhm
Crosstalk
-72dB @ 100kHz
Current - Leakage (IS(off)) (Max)
20nA
Operating Temperature
-55°C ~ 125°C (TA)
Package / Case
16-UFQFN
Channel-to-Channel Matching (ΔRon)
150mOhm
Voltage - Supply, Dual (V±)
-
-3db Bandwidth
40MHz
Number of Circuits
4
Switch Time (Ton, Toff) (Max)
55ns, 30ns
Overview

DESCRIPTION

· The STG3699B is a high-speed CMOS low voltage quad analog SPDT switch or 2:1 multiplexer/demultiplexer switch fabricated using silicon gate C2MOS technology. It operates from 1.65 to 4.3 V, making it ideal for portable applications. It offers very low ON resistance (RON < 0.5 Ω) at VCC = 3.0 V. The nIN inputs control the independent channel switches nS1 and nS2. The switches nS1 are ON when nIN is high and OFF when nIN is low. The switches nS2 are ON when nIN is low and OFF when nIN is high. It features fast switching speed, break-before-make delay time, and ultra-low power consumption. All inputs and outputs are protected against static discharge, providing ESD and excess transient voltage immunity. The STG3699B is available in a QFN16L, 2.6 x 1.8 mm package.



FEATURES

· High speed: tPD = 1.5 ns (typ.) at VCC = 3.0 V and 2.3 V.
· Ultra-low power dissipation: ICC = 0.2 μA (max.) at TA = 85°C.
· Low ON resistance: RON = 0.50 Ω (max.) at VCC = 4.3 V, RON = 0.55 Ω (max.) at VCC = 3.0 V and 2.7 V.
· Wide operating voltage range: VCC (OPR) = 1.65 to 4.3 V single supply.
· 4.3 V tolerant and 1.8 V compatible thresholds on digital control input at VCC = 2.3 to 3.0 V.
· Latch-up performance exceeds 300 mA (JESD 17).
· ESD performance (analog channel vs. GND): HBM > 2 kV (MIL STD 883 method 3015).



APPLICATIONS

· Portable applications requiring low voltage and low ON resistance.
· High-speed signal switching in multiplexing and demultiplexing circuits.
· Systems requiring break-before-make switching to prevent signal overlap.
· Low power consumption devices with ESD protection.

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