STMicroelectronics STG4260BJR

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Specifications
Type
Paramete
Type
Paramete
Switch Circuit
SPDT
Charge Injection
140pC
Operating Temperature
-40°C ~ 85°C (TA)
Voltage - Supply, Dual (V±)
-
Crosstalk
-67dB @ 1MHz
Current - Leakage (IS(off)) (Max)
30nA
Number of Circuits
2
-3db Bandwidth
50MHz
Channel-to-Channel Matching (ΔRon)
10mOhm
Package / Case
12-UFBGA, FCBGA
Voltage - Supply, Single (V+)
1.65V ~ 4.8V
Supplier Device Package
12-FlipChip
Mounting Type
Surface Mount
On-State Resistance (Max)
500mOhm
Switch Time (Ton, Toff) (Max)
38ns, 38ns
Multiplexer/Demultiplexer Circuit
2:1
Grade
-
Qualification
-
Channel Capacitance (CS(off), CD(off))
30pF
Overview

DESCRIPTION

· The STG4260 is a high-speed CMOS low voltage dual analog SPDT switch or 2:1 multiplexer/demultiplexer switch.

· Fabricated in silicon gate C2MOS technology, it operates from 1.65 V to 4.8 V, ideal for portable applications.

· Features low ON-resistance (0.40 Ω typ.) at VCC = 4.3 V and includes SEL inputs for switch control.



FEATURES

· Wide operating voltage range: VCC (OPR) = 1.65 to 4.8 V.

· Low power dissipation: ICC = 0.2 µA (max.) at TA = 85 °C.

· Low "ON" resistance: RON= 0.75 Ω at VCC= 2.25 V, RON= 0.50 Ω at VCC= 3.0 V, RON=0.40 Ω at VCC=4.3V.

· Separate supply voltage for switch and control pin.

· Latch-up performance exceeds 100 mA per JESD 78, Class II.

· ESD protection: 15 kV IEC-61000-4-2 ESD on common pin, 8 kV HBM JESD22 A114-B Class II on S1 and S2 pins, 4 kV HBM on all other pins.



APPLICATIONS

· Mobile phones.



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