Name: TK2P60D(TE16L1%2CNV)
Brand: Toshiba Semiconductor and Storage
SKU: JM-TK2P60D(TE16L1%2CNV)
Availability: InStock

Toshiba Semiconductor and Storage TK2P60D(TE16L1,NV)

View All Single FETs, MOSFETs by Toshiba Semiconductor and Storage

Part Number:
TK2P60D(TE16L1,NV)
Manufacturer:
Toshiba Semiconductor and Storage
Category:
Single FETs, MOSFETs
RoHs:
RoHS Compliant
Datasheet:
TK2P60D(TE16L1,NV)_Datesheet
Description:
MOSFET N-CH 600V 2A PW-MOLD
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Specifications

Type

Paramete

Type

Paramete

FET Feature

Gate Charge (Qg) (Max) @ Vgs

7 nC @ 10 V

FET Type

N-Channel

Rds On (Max) @ Id, Vgs

4.3Ohm @ 1A, 10V

Qualification

Grade

Package / Case

TO-252-3, DPAK (2 Leads + Tab), SC-63

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

280 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Drain to Source Voltage (Vdss)

600 V

Technology

MOSFET (Metal Oxide)

Power Dissipation (Max)

60W (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Operating Temperature

150°C

Supplier Device Package

PW-MOLD

Vgs(th) (Max) @ Id

4.4V @ 1mA

Overview

DESCRIPTION

· Silicon N Channel MOS Type (π-MOSⅦ) Field Effect Transistor
· Designed for switching regulator applications
· Commercial production started in September 2009

FEATURES

· Low drain-source ON-resistance: R_DS(ON) = 3.3 Ω (typ.)
· High forward transfer admittance: |Y_fs| = 1.0 S (typ.)
· Low leakage current: I_DSS = 10 μA (V_DS = 600 V)
· Enhancement-mode: V_th = 2.4 to 4.4 V (V_DS = 10 V, I_D = 1 mA)
· Maximum drain-source voltage: V_DSS = 600 V
· Maximum gate-source voltage: V_GSS = ±30 V
· Maximum drain current: I_D = 2 A (DC), I_DP = 8 A (pulse)
· Maximum drain power dissipation: P_D = 60 W (T_c = 25°C)
· Maximum channel temperature: T_ch = 150°C

APPLICATIONS

· Switching regulators
· Power management systems
· High-efficiency power conversion circuits

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