Name: TPC6901(TE85L%2CF%2CM)
Brand: Toshiba Semiconductor and Storage
SKU: JM-TPC6901(TE85L%2CF%2CM)
Availability: InStock

Toshiba Semiconductor and Storage TPC6901(TE85L,F,M)

View All Bipolar Transistor Arrays by Toshiba Semiconductor and Storage

Part Number:
TPC6901(TE85L,F,M)
Manufacturer:
Toshiba Semiconductor and Storage
Category:
Bipolar Transistor Arrays
RoHs:
RoHS Compliant
Datasheet:
TPC6901(TE85L,F,M)_Datesheet
Description:
TRANS NPN/PNP 50V 6VS
In stock 0

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Specifications

Type

Paramete

Type

Paramete

Package / Case

SOT-23-6 Thin, TSOT-23-6

DC Current Gain (hFE) (Min) @ Ic, Vce

400 @ 100mA, 2V / 200 @ 100mA, 2V

Qualification

Transistor Type

1 NPN, 1 PNP

Grade

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Vce Saturation (Max) @ Ib, Ic

170mV @ 6mA, 300mA / 230mV @ 10mA, 300mA

Supplier Device Package

VS-6 (2.9x2.8)

Voltage - Collector Emitter Breakdown (Max)

50V

Current - Collector Cutoff (Max)

100nA (ICBO)

Power - Max

400mW

Frequency - Transition

Current - Collector (Ic) (Max)

1A, 700mA

Overview

DESCRIPTION

· The TPC6901 is a multi-chip transistor from TOSHIBA, featuring both NPN and PNP epitaxial types, designed for high-speed switching and MOS gate drive applications.

FEATURES

· Compact and slim package housing both NPN and PNP transistors.

· High DC current gain: NPN hFE ranges from 400 to 1000; PNP hFE ranges from 200 to 500.

· Low collector-emitter saturation voltage: NPN VCE(sat) max at 0.17 V; PNP VCE(sat) max at 0.23 V.

· High-speed switching capability: NPN tf typical at 85 ns; PNP tf typical at 70 ns.

· Lightweight design, typically weighing 0.011 g.

APPLICATIONS

· Suitable for high-speed switching applications.

· Ideal for MOS gate drive applications.

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