Toshiba Semiconductor and Storage ULN2004AFWG,N,E

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Specifications
Type
Paramete
Type
Paramete
Supplier Device Package
16-SOL
Current - Collector (Ic) (Max)
500mA
Grade
-
Transistor Type
7 NPN Darlington
Qualification
-
Voltage - Collector Emitter Breakdown (Max)
50V
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 85°C (TA)
Power - Max
1.25W
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 350mA, 2V
Frequency - Transition
-
Current - Collector Cutoff (Max)
-
Package / Case
16-SOIC (0.154", 3.90mm Width)
Vce Saturation (Max) @ Ib, Ic
1.6V @ 500µA, 350mA
Overview

DESCRIPTION

· TBD62003A and TBD62004A series are 7-channel sink type DMOS transistor arrays.
· Each output has a built-in clamp diode for switching inductive loads.
· Thermal conditions should be carefully monitored during use.



FEATURES

· 7 circuits integrated in each device.
· High voltage capability: VOUT = 50 V (MAX).
· High current capacity: IOUT = 500 mA/ch (MAX).
· Input voltage (output on): TBD62003A series 2.5 V (MIN), TBD62004A series 7.0 V (MIN).
· Input voltage (output off): TBD62003A series 0.6 V (MAX), TBD62004A series 1.0 V (MAX).
· Available in multiple package types: PG type DIP16, FG type SOP16, FNG type SSOP16, FWG type P-SOP16.



APPLICATIONS

· Suitable for driving inductive loads in various electronic systems.
· Ideal for applications requiring high voltage and high current switching.

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