DESCRIPTION

· The 2ED2304S06F is a 650-V half-bridge gate driver utilizing Infineon's thin-film-SOI technology for enhanced ruggedness and noise immunity.
· It features Schmitt trigger logic inputs compatible with CMOS or LSTTL logic down to 3.3 V.
· Designed to drive N-channel power MOSFETs or IGBTs in high-side configurations up to 650 V, with built-in interlock logic to prevent shoot-through.

FEATURES

· Operational up to +650 V with a floating channel for bootstrap operation.
· Output source/sink current capability of +0.36 A/-0.7 A.
· Integrated ultra-fast, low RDS(ON) bootstrap diode.
· Tolerant to negative transient voltages up to -100 V.
· Propagation delay matching of 10 ns typical, 60 ns maximum.
· Gate drive supply range from 10 V to 20 V with undervoltage lockout for both channels.
· Integrated dead-time with interlocking function, compatible with 3.3 V, 5 V, and 15 V input logic.
· RoHS compliant.

APPLICATIONS

· Motor drives and general-purpose inverters.
· Refrigeration compressors.
· Half-bridge and full-bridge converters in offline AC-DC power supplies for telecom and lighting.