Rohm Semiconductor BS2132F-E2

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  • Part Number:

    BS2132F-E2

  • Manufacturer:

    Rohm Semiconductor

  • Category:

    Gate Drivers

  • RoHs:

    rohs RoHS Compliant

  • Datasheet:

    pdf BS2132F-E2_Datesheet

  • Description:

    600V HIGH VOLTAGE 3 PHASE BRIDGE

  • In stock 21
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Specifications
Type
Paramete
Type
Paramete
Package / Case
28-SOIC (0.295", 7.50mm Width)
Number of Drivers
3
Operating Temperature
-40°C ~ 125°C (TA)
Supplier Device Package
28-SOP
Voltage - Supply
11.5V ~ 20V
Rise / Fall Time (Typ)
125ns, 50ns
Channel Type
3-Phase
Current - Peak Output (Source, Sink)
-
Gate Type
IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH
0.8V, 2.6V
Mounting Type
Surface Mount
Input Type
Non-Inverting
Grade
-
Driven Configuration
High-Side
High Side Voltage - Max (Bootstrap)
600 V
Qualification
-
Overview

DESCRIPTION

· The BS2132F is a monolithic bridge driver IC designed for 3-phase systems, capable of driving external Nch-FET and IGBT drivers using bootstrap operations.

· It integrates a 600V high-voltage bootstrap diode between the VCC and VB pins.

· The device supports 3.3V and 5.0V logic inputs and includes protection features such as Under Voltage Lockout (UVLO) and Over Current Protection (OCP).

· The /FAULT pin outputs protection detection signals, and the RCIN pin allows customization of the OCP holding time using external resistance and capacitance.



FEATURES

· High-side floating supply offset voltage range up to 600V.

· Gate drive supply range from 11.5V to 20V.

· Integrated 600V high-voltage bootstrap diode between VCC and VB pins.

· Built-in UVLO for both channels and high-precision OCP circuit (0.46V±5%).

· Includes an Enable (EN) pin for I/O functionality and a /FAULT pin for protection signal output.

· RCIN pin enables OCP holding time adjustment via external components.

· Compatible with 3.3V and 5.0V input logic, with output in phase with input.



APPLICATIONS

· MOSFET and IGBT driver applications in 3-phase systems.



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