DESCRIPTION

· The DS1312 is a CMOS circuit designed to convert CMOS SRAM into nonvolatile memory.
· It monitors incoming power for out-of-tolerance conditions and switches to battery backup during power failures.
· Utilizes a low-leakage CMOS process for precise voltage detection with minimal battery consumption.

FEATURES

· Converts CMOS SRAM into nonvolatile memory.
· Unconditionally write-protects SRAM when VCC is out of tolerance.
· Automatically switches to battery backup during power failure.
· Monitors lithium cell voltage and provides advanced battery failure warning.
· Signals low-battery condition via an active-low Battery Warning output.
· Offers optional 5% or 10% power-fail detection.
· Available in space-saving 8-pin DIP and SOIC packages, with optional 16-pin SOIC and 20-pin TSSOP versions.
· Resets processor during power failure and holds it in reset during system power-up.
· Operates in an industrial temperature range of -40°C to +85°C.

APPLICATIONS

· Ideal for systems requiring nonvolatile memory solutions.
· Suitable for applications needing reliable battery backup and power-fail detection.
· Useful in industrial environments with extended temperature requirements.