Features

• Floating channel designed for bootstrap operation
• Fully operational to +600V
• Tolerant to negative transient voltage, dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout
• 3.3V, 5V, and 15V logic input compatible
• Matched propagation delay for both channels
• Outputs in phase with inputs (IR2101) or out of phase with inputs (IR2102)
• Also available LEAD-FREE

Product Summary

• VOFFSET: 600V max.
• IO+/130 mA / 270 mA: Output current capabilities
• VOUT: 10 - 20V
• ton/off (typ.): 160 & 150 ns
• Delay Matching: 50 ns

Description

The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. They feature a ruggedized monolithic construction enabled by proprietary HVIC and latch immune CMOS technologies. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers include a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

Packages

• 8-Lead SOIC IR2101S/IR2102S
• 8-Lead PDIP IR2101/IR2102

Absolute Maximum Ratings

• VB: High side floating supply voltage, -0.3 to 625
• VS: High side floating supply offset voltage, VB - 25 to VB + 0.3
• VHO: High side floating output voltage, VS - 0.3 to VB + 0.3
• VCC: Low side and logic fixed supply voltage, -0.3 to 25
• VLO: Low side output voltage, -0.3 to VCC + 0.3
• VIN: Logic input voltage (HIN & LIN), -0.3 to VCC + 0.3
• dVS/dt: Allowable offset supply voltage transient, — 50 V/ns
• PD: Package power dissipation @ TA ≤ +25°C, (8 lead PDIP) — 1.0, (8 lead SOIC) — 0.625
• RthJA: Thermal resistance, junction to ambient, (8 lead PDIP) — 125, (8 lead SOIC) — 200
• TJ: Junction temperature, — 150
• TS: Storage temperature, -55 to 150
• TL: Lead temperature (soldering, 10 seconds), — 300