CSD87334Q3DT Product Information Summary

Product Overview

• Manufacturer: Texas Instruments
• Model: CSD87334Q3DT
• Description: Synchronous Buck NexFET™ Power Block

Features

• Half-Bridge Power Block
• Optimized for High-Duty Cycle
• Up to 24 Vin
• 96.1% System Efficiency at 12 A
• 1.6-W PLoss at 12 A
• Up to 20-A Operation
• High-Frequency Operation (up to 1.5 MHz)
• High-Density SON 3.3 mm × 3.3 mm Footprint
• Optimized for 5-V Gate Drive
• Low-Switching Losses
• Ultra-Low-Inductance Package
• RoHS Compliant
• Halogen-Free
• Lead-Free Terminal Plating

Applications

• Synchronous Buck Converters – High-Frequency Applications
• Synchronous Boost Converters
• POL DC-DC Converters

Ordering Information

• Global Part Number: CSD87334Q3DT
• Package: VSON-CLIP (DPB)
• Pins: 8
• Package Quantity: 250
• Carrier: SMALL T&R
• RoHS Compliant: Yes
• Lead Finish/Ball Material: NIPDAU
• MSL Rating/Peak Reflow: Level-1-260C-UNLIM
• Operating Temperature Range: -55°C to 150°C
• Part Marking: 87334D

Electrical Characteristics

• Capacitance Range: 2 pF to 1.5 nF
• Tolerance: ±10% (K)
• Temperature Coefficient: NP0 (±30 ppm/°C)
• Operating Temperature Range: -55°C to +125°C
• Safety Certification: X1/Y2 & X2/Y3
• Packaging: Tape & Reel
• Termination: Nickel-barrier end termination
• RoHS Compliant: Yes
• Halogen Free Compliant: Yes

Dimensions

• Length (L1): 4.8 mm ±0.30 mm
• Width (W): 3.2 mm ±0.30 mm
• Thickness (T): 2.0 mm ±0.20 mm
• Termination Length (L2/L3): Min 0.25 mm, Max 0.75 mm

Absolute Maximum Ratings

• VIN to PGND: 30 V
• VSW to PGND: 30 V
• TG to TGR: -0.3 V to 10 V
• BG to PGND: -0.3 V to 10 V
• IDM Pulsed current rating: 60 A
• PD Power dissipation: 6 W
• EAS Avalanche energy: 48 mJ
• TJ Operating junction temperature: -55°C to 150°C
• Tstg Storage temperature: -55°C to 150°C

Recommended Operating Conditions

• VGS Gate drive voltage: 3.3 V to 8 V
• VIN Input supply voltage: 24 V
• Switching frequency: 1500 kHz
• Operating current: 20 A
• TJ Operating temperature: 125°C

Power Block Performance

• Power Loss: 1.6 W at 12 A, 500 kHz, 3.3 V output
• VIN Quiescent Current: 10 µA

Thermal Information

• RθJA Junction-to-ambient thermal resistance: 130°C/W (min Cu), 75°C/W (max Cu)
• RθJC Junction-to-case thermal resistance: 21°C/W (top of package), 2.1°C/W (PGND pin)

Electrical Characteristics

• BVDSS Drain-to-source voltage: 30 V
• IDSS Drain-to-source leakage current: 1 µA
• IGSS Gate-to-source leakage current: 100 nA
• VGS(th) Gate-to-source threshold voltage: 0.75 V to 1.20 V
• RDS(on) Drain-to-source on resistance: 6.3 mΩ to 8.3 mΩ at 3.5 V, 5.6 mΩ to 7.0 mΩ at 4.5 V, 4.9 mΩ to 6.0 mΩ at 8 V

Typical Power Block Device Characteristics

• Power Loss vs Output Current: See Figure 1
• Power Loss vs Temperature: See Figure 2
• Safe Operating Area: See Figures 3 to 5
• Normalized Power Loss vs Switching Frequency: See Figure 6
• Normalized Power Loss vs Input Voltage: See Figure 7
• Normalized Power Loss vs Output Voltage: See Figure 8
• Normalized Power Loss vs Output Inductance: See Figure 9

Layout Guidelines

• PCB Design: Optimize for electrical and thermal performance
• Input Capacitors: Place close to VIN and PGND pins
• Driver IC: Place close to TG and BG pins
• Output Inductor: Place close to VSW pins
• Thermal Vias: Use to pull heat away from the device

Mechanical, Packaging, and Orderable Information

• Package Dimensions: See Figure 15
• Land Pattern Recommendation: See Figure 16
• Stencil Recommendation: See Figure 17
• Tape and Reel Information: See Section 9.4