DESCRIPTION

· Agilent AT-30511 and AT-30533 are high-performance NPN bipolar transistors optimized for low voltage operation.
· AT-30533 uses a 3-lead SOT-23 package, while AT-30511 uses a 4-lead SOT-143 package.
· Both packages are industry-standard and compatible with high-volume surface mount assembly techniques.
· The transistors feature a 3.2-micron emitter-to-emitter pitch and reduced parasitic design for high performance.
· The 5-emitter finger interdigitated geometry ensures high speed, high gain, and low operating currents.
· Optimized for 2.7 V operation, making them ideal for battery-powered applications in wireless markets.
· Fabricated using Agilent’s 10 GHz f_T, 30 GHz f_MAX Self-Aligned-Transistor (SAT) process.
· Die are nitride passivated for surface protection, ensuring uniformity, performance, and reliability.

FEATURES

· High-performance bipolar transistor optimized for low current and low voltage operation.
· 900 MHz performance: AT-30511: 1.1 dB NF, 16 dB G_A; AT-30533: 1.1 dB NF, 13 dB G_A.
· Characterized for end-of-life battery use at 2.7 V.
· Available in SOT-23 and SOT-143 SMT plastic packages.
· Tape-and-reel packaging option available.
· Lead-free option available.

APPLICATIONS

· Ideal for 900 MHz, 1.8 GHz, and 2.4 GHz battery-operated systems.
· Suitable for use as an LNA, gain stage, buffer, oscillator, or active mixer.
· Typical amplifier designs at 900 MHz yield 1.3 dB noise figures with 13 dB or more associated gain at 2.7 V, 1 mA bias.
· High gain capability at 1 V, 1 mA makes them suitable for 900 MHz pager applications.