BSP75NTA Product Summary

Basic Information

• Part Number: BSP75NTA
• Package Type: SOT223 (Type DN)
• Marking: BSP75N
• Reel Size: 7 inches
• Tape Width: 12 mm
• Packing Quantity: 1000 Units per Reel

Product Description

The BSP75N is a self-protected, low-side IntelliFET® MOSFET designed for general-purpose switching applications. It features monolithic overtemperature, overcurrent, overvoltage (active clamp), and ESD protection. The device is particularly suitable for loads with high inrush currents, such as lamps and motors, and can replace electromechanical relays and discrete circuits.

Applications

• Suitable for all types of resistive, inductive, and capacitive loads in switching applications.
• Compatible with microcontroller power switches for 12V and 24V DC applications.
• Replaces electromechanical relays and discrete circuits.
• Linear mode capabilities with current-limiting protection circuitry designed to deactivate at low VDS.

Features and Benefits

• Short-Circuit Protection with Auto Restart
• Overvoltage Protection (Active Clamp)
• Thermal Shutdown with Auto Restart
• Overcurrent Protection
• Input Protection (ESD)
• Load-Dump Protection (Actively Protects Load)
• Logic-Level Input
• High Continuous Current Rating
• Lead-Free Finish; RoHS Compliant
• Halogen and Antimony Free. “Green” Device

Mechanical Data

• Package: SOT223
• Package Material: Molded Plastic, “Green” Molding Compound UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish
• Weight: 0.112 grams (Approximate)

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified)

• Continuous Drain-Source Voltage (VDS): 60 V
• Drain-Source Voltage for Short-Circuit Protection (VDS(SC)):VIN = 5V: 36 VVIN = 10V: 20 V
• Continuous Input Voltage (VIN): -0.2 to 10 V
• Peak Input Voltage (VIN): -0.2 to 20 V
• Operating Temperature Range (TJ): -40 to +150 °C
• Storage Temperature Range (TSTG): -55 to +150 °C
• Power Dissipation at TA = +25°C (PD):With high copper coverage: 1.5 WWith minimum copper: 0.6 W
• Continuous Drain Current (ID):VIN = 10V, TA = +25°C (high copper): 1.3 AVIN = 5V, TA = +25°C (high copper): 1.1 AVIN = 5V, TA = +25°C (minimum copper): 0.7 A
• Continuous Source Current (Body Diode) (IS): 2.0 A
• Pulsed Source Current (Body Diode) (IS): 3.3 A
• Unclamped Single Pulse Inductive Energy (EAS): 550 mJ
• Load Dump Protection (VLOAD_DUMP): 80 V
• Electrostatic Discharge (Human Body Model) (VESD): 4000 V

Thermal Resistance

• Junction to Ambient (RθJA):High copper coverage: 83 °C/WMinimum copper: 208 °C/WMeasured at t ≤ 10s: 45 °C/W

Electrical Characteristics (@TA = +25°C, unless otherwise specified)

• Static Characteristics:Drain-Source Clamp Voltage (VDS(AZ)): 60 to 75 V (ID = 10mA)Off-State Drain Current (IDSS):VDS = 12V, VIN = 0V: 0.1 to 3 µAVDS = 32V, VIN = 0V: 3 to 15 µAInput Threshold Voltage (VIN(TH)): 1 to 2.1 V (VDS = VGS, ID = 1mA)Input Current (IIN):VIN = 5V: 0.7 to 1.2 mAVIN = 7V: 1.5 to 2.7 mAVIN = 10V: 4 to 7 mAStatic Drain-Source On-State Resistance (RDS(ON)):VIN = 5V, ID = 0.7A: 520 to 675 mΩVIN = 10V, ID = 0.7A: 385 to 550 mΩCurrent Limit (ID(LIM)):VIN = 5V, VDS > 5V: 0.7 to 1.5 AVIN = 10V, VDS > 5V: 1 to 2.3 A
• Dynamic Characteristics:Turn-On Time (VIN to 90% ID) (tON): 3 μs (RL = 22Ω, VIN = 0V to 10V, VDD = 12V)Turn-Off Time (VIN to 90% ID) (tOFF): 13 μs (RL = 22Ω, VIN = 10V to 0V, VDD = 12V)Slew Rate On (70% to 50% VDD) (-dvDS/dtON): 8 V/μs (RL = 22Ω, VIN = 0V to 10V, VDD = 12V)Slew Rate Off (50% to 70% VDD) (dvDS/dtON): 3.2 V/μs (RL = 22Ω, VIN = 10V to 0V, VDD = 12V)
• Protection Functions:Minimum Input Voltage for Overtemperature Protection (VPROT): 4.5 VThermal Overload Trip Temperature (TJT): +150 to +175 °CThermal Hysteresis: +1 °CUnclamped Single Pulse Inductive Energy (EAS):TJ = +25°C: 550 mJ (ID(ISO) = 0.7A, VDD = 32V)TJ = +150°C: 200 mJ (ID(ISO) = 0.7A, VDD = 32V)
• Inverse Diode:Source Drain Voltage (VSD): 1 V (VIN = 0V, -ID = 1.4A)

Application Information

The current-limit protection circuitry is designed to deactivate at low VDS to prevent the load current from being unnecessarily restricted during normal operation. The maximum DC operating current is determined by the thermal capability of the package/board combination rather than by the protection circuitry.

Package Outline Dimensions

• SOT223 (Type DN):A: 1.70 mm (max)A1: 0.01 to 0.15 mmA2: 1.50 to 1.68 mmb: 0.60 to 0.80 mmb2: 2.90 to 3.10 mmc: 0.20 to 0.32 mmD: 6.30 to 6.70 mmE: 6.70 to 7.30 mmE1: 3.30 to 3.70 mme: 2.30 mme1: 4.60 mmL: 0.85 mm (min)

Suggested Pad Layout

• Dimensions in mm:C: 2.30 mmC1: 6.40 mmX: 1.20 mmX1: 3.30 mmY: 1.60 mmY1: 1.60 mmY2: 8.00 mm