Summary of Product Specifications for 74AHC1G86GW,125 (2-input EXCLUSIVE-OR gate)

General Information

•Component Number: 74AHC1G86GW,125

•Product Category: 2-input EXCLUSIVE-OR gate

•Producer: Nexperia B.V.

General Description

The 74AHC1G86GW,125 is a single 2-input EXCLUSIVE-OR gate intended for use in mixed voltage environments. It has overvoltage-tolerant inputs, enabling it to function as a translator in various applications.

Features

•Broad Supply Voltage Range: 2.0 to 5.5 V

•Overvoltage Tolerant Inputs: Up to 5.5 V

•High Noise Immunity

•CMOS Low Power Dissipation

•Latch-up Performance: Exceeds 100 mA per JESD 78 Class II Level A

•Symmetrical Output Impedance

•Balanced Propagation Delays

•Input Levels:74AHC1G86: CMOS level74AHCT1G86: TTL level

•Multiple Package Options

•ESD Protection:HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 VCDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

•Temperature Range: -40°C to +125°C

Ordering Information

•Package Type: TSSOP5 plastic thin shrink small outline package

•Temperature Range: -40°C to +125°C

•Package Code: SOT353-1

Marking

•Marking Code: AH

Functional Diagram

•Logic Symbol:mna038

•IEC Logic Symbol:mna039

•Logic Diagram:mna040

Pinning Information

•Pinning:aaa-035731aaa-035732

•Pin Description:B: Data inputA: Data inputGND: Ground (0 V)Y: Data outputVCC: Supply voltage

Functional Description

•Function Table:mna038mna039mna040

Limiting Values

•Supply Voltage (VCC): -0.5 to +7.0 V

•Input Voltage (VI): -0.5 to +7.0 V

•Input Clamping Current (IIK): ±20 mA (VI < -0.5 V)

•Output Clamping Current (IOK): ±20 mA (VO < -0.5 V or VO > VCC + 0.5 V)

•Output Current (IO): ±25 mA (-0.5 V < VO < VCC + 0.5 V)

•Supply Current (ICC): 75 mA

•Ground Current (IGND): -75 mA

•Storage Temperature (Tstg): -65 to +150 °C

•Total Power Dissipation (Ptot): 250 mW (Tamb = -40°C to +125°C)

Recommended Operating Conditions

•Supply Voltage (VCC): 2.0 to 5.5 V (74AHC1G86), 4.5 to 5.5 V (74AHCT1G86)

•Input Voltage (VI): 0 to 5.5 V

•Output Voltage (VO): 0 to VCC

•Ambient Temperature (Tamb): -40°C to +125°C

•Input Transition Rise and Fall Rate: 100 ns/V (VCC = 3.3 V ± 0.3 V), 20 ns/V (VCC = 5.0 V ± 0.5 V)

Static Characteristics

•High-Level Input Voltage (VIH):74AHC1G86: 1.5 V (VCC = 2.0 V), 2.1 V (VCC = 3.0 V), 3.85 V (VCC = 5.5 V)74AHCT1G86: 2.0 V (VCC = 4.5 V to 5.5 V)

•Low-Level Input Voltage (VIL):74AHC1G86: 0.5 V (VCC = 2.0 V), 0.9 V (VCC = 3.0 V), 1.65 V (VCC = 5.5 V)74AHCT1G86: 0.8 V (VCC = 4.5 V to 5.5 V)

•High-Level Output Voltage (VOH):74AHC1G86: 1.9 V (VCC = 2.0 V), 2.9 V (VCC = 3.0 V), 4.4 V (VCC = 4.5 V)74AHCT1G86: 4.4 V (VCC = 4.5 V to 5.5 V)

•Low-Level Output Voltage (VOL):74AHC1G86: 0.1 V (VCC = 2.0 V), 0.1 V (VCC = 3.0 V), 0.1 V (VCC = 4.5 V)74AHCT1G86: 0.1 V (VCC = 4.5 V to 5.5 V)

•Input Leakage Current (II): 0.1 to 2.0 μA (VI = 5.5 V or GND; VCC = 0 V to 5.5 V)

•Supply Current (ICC): 1.0 to 40 μA (VI = VCC or GND; IO = 0 A; VCC = 5.5 V)

•Input Capacitance (CI): 1.5 to 10 pF

Dynamic Characteristics

•Propagation Delay (tpd):74AHC1G86:VCC = 3.0 V to 3.6 V: 4.0 to 14.0 ns (CL = 15 pF), 5.8 to 18.5 ns (CL = 50 pF)VCC = 4.5 V to 5.5 V: 3.4 to 8.5 ns (CL = 15 pF), 4.9 to 11.5 ns (CL = 50 pF)74AHCT1G86:VCC = 4.5 V to 5.5 V: 3.5 to 9.0 ns (CL = 15 pF), 5.0 to 10.5 ns (CL = 50 pF)

•Power Dissipation Capacitance (CPD):74AHC1G86: 9 pF (CL = 50 pF; f = 1 MHz; VI = GND to VCC)74AHCT1G86: 11 pF (CL = 50 pF; f = 1 MHz; VI = GND to VCC)

Package Outline

•SOT353-1 (TSSOP5):Dimensions (mm):A: 1.1A1: 1.0A2: 1.0A3: 1.0bp: 0.15c: 0.1D(1): 2.2E(1): 0.65e: 0.1e1: 0.08HE: 1.3Lp: 0.8v: 0.15w: 1.8y: 0.8