International Rectifier IR2131SPBF

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  • Part Number:

    IR2131SPBF

  • Manufacturer:

    International Rectifier

  • Category:

    Gate Drivers

  • RoHs:

    rohs Non-RoHS Compliant

  • Datasheet:

    pdf IR2131SPBF_Datesheet

  • Description:

    IR2131S - GATE DRIVER

  • In stock 391
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Specifications
Type
Paramete
Type
Paramete
Package / Case
28-SOIC (0.295", 7.50mm Width)
High Side Voltage - Max (Bootstrap)
600 V
Gate Type
IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH
0.8V, 2.2V
Driven Configuration
Half-Bridge
Voltage - Supply
10V ~ 20V
Grade
-
Input Type
Inverting
Current - Peak Output (Source, Sink)
250mA, 500mA
Qualification
-
Channel Type
Independent
Supplier Device Package
28-SOIC
Mounting Type
Surface Mount
Number of Drivers
6
Operating Temperature
-40°C ~ 150°C (TJ)
Rise / Fall Time (Typ)
80ns, 40ns
Overview

DESCRIPTION

· The IR2131(J)(S) is a high voltage, high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels.
· Utilizes HVIC technology for ruggedized monolithic construction.
· Compatible with CMOS or LSTTL outputs, down to 2.5V logic.
· Features a current trip function and a shutdown input for customized shutdown functionality.
· Provides an open drain FAULT signal to indicate shutdown occurrences.
· Designed for minimal driver cross-conduction with matched propagation delays for high frequency applications.
· Capable of driving N-channel power MOSFETs or IGBTs in high side configurations up to 600 volts.



FEATURES

· Floating channel designed for bootstrap operation, fully operational to +600V.
· Tolerant to negative transient voltage and dV/dt immune.
· Gate drive supply range from 10 to 20V.
· Undervoltage lockout for all channels.
· Over-current shutdown turns off all six drivers.
· Independent 3 high side & 3 low side drivers.
· Matched propagation delay for all channels.
· 2.5V logic compatible.
· Outputs out of phase with inputs.
· Available in 28-Lead SOIC & 44-Lead PLCC, also in Lead-Free versions.



APPLICATIONS

· Suitable for high voltage, high speed power MOSFET and IGBT driving applications.
· Ideal for use in high frequency applications due to matched propagation delays.
· Effective in configurations requiring up to 600V operation.
· Can be used in systems requiring customized shutdown functions and fault indication.

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