NXP MC33395DWB

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  • Part Number:

    MC33395DWB

  • Manufacturer:

    NXP

  • Category:

    Gate Drivers

  • RoHs:

    rohs Non-RoHS Compliant

  • Datasheet:

    pdf MC33395DWB_Datesheet

  • Description:

    IC GATE DRVR HALF-BRIDGE 32SOIC

  • In stock 0
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Specifications
Type
Paramete
Type
Paramete
Qualification
-
Grade
-
Driven Configuration
Half-Bridge
Current - Peak Output (Source, Sink)
-
Rise / Fall Time (Typ)
350ns, 250ns
Channel Type
3-Phase
Package / Case
32-BSSOP (0.295", 7.50mm Width)
Supplier Device Package
32-SOIC
Logic Voltage - VIL, VIH
-
Voltage - Supply
5.5V ~ 24V
High Side Voltage - Max (Bootstrap)
-
Number of Drivers
6
Gate Type
N-Channel MOSFET
Mounting Type
Surface Mount
Input Type
Non-Inverting
Operating Temperature
-40°C ~ 150°C (TJ)
Overview

DESCRIPTION

· The MC33395 is a three-phase gate driver IC designed to simplify high-power BLDC motor control by integrating gate drive, charge pump, current sense, and protection circuitry for driving six N-channel power MOSFETs in a three-phase bridge configuration.

· It features mode logic for routing PWM or complementary PWM signals to either low-side or high-side MOSFETs, and includes detection and drive circuitry for reverse battery protection.

· The device supports PWM frequencies up to 28 kHz and is parametrically specified for an ambient temperature range of -40°C to 125°C and a supply voltage range of 5.5V to 24V.



FEATURES

· Drives six N-channel low RDS(ON) power MOSFETs.

· Built-in charge pump circuitry, current sense comparator, and output drive current limiting.

· Integrated PWM mode control logic and circuit protection features including overvoltage, overtemperature, overcurrent, and undervoltage shutdown.

· Designed for fractional to integral HP BLDC motors.

· Available in a 32-pin SOIC wide body surface mount package.

· Incorporates a shoot-through suppression timer (<5.0 μs for 33395, <1.0 μs for 33395T).

· Pb-free packaging designated by suffix code EW.



APPLICATIONS

· High-power BLDC motor control systems.

· Three-phase bridge configurations using N-channel power MOSFETs.

· Systems requiring reverse battery protection and robust circuit protection mechanisms.

· Applications in fractional to integral horsepower BLDC motors.



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