NXP MC33GD3100EK

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  • Part Number:

    MC33GD3100EK

  • Manufacturer:

    NXP

  • Category:

    Gate Drivers

  • RoHs:

    rohs RoHS Compliant

  • Datasheet:

    pdf MC33GD3100EK_Datesheet

  • Description:

    IGBT GATE DRIVE IC

  • In stock 0
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Specifications
Type
Paramete
Type
Paramete
Logic Voltage - VIL, VIH
-
Grade
Automotive
Mounting Type
Surface Mount
Current - Peak Output (Source, Sink)
15A, 15A
High Side Voltage - Max (Bootstrap)
-
Gate Type
IGBT, N-Channel MOSFET
Number of Drivers
1
Channel Type
Single
Voltage - Supply
5V
Input Type
-
Qualification
AEC-Q100
Rise / Fall Time (Typ)
-
Operating Temperature
-40°C ~ 125°C (TA)
Package / Case
32-BSSOP (0.295", 7.50mm Width)
Supplier Device Package
32-SOIC
Driven Configuration
Half-Bridge
Overview

DESCRIPTION

· The MC33GD3100 is an advanced single-channel gate driver for IGBTs and SiC power devices.
· It features integrated galvanic isolation and low on-resistance drive transistors for high charging/discharging current and rail-to-rail gate voltage control.
· It includes current and temperature sensing to minimize IGBT stress during faults.
· It offers configurable undervoltage lockout (UVLO) for protection and sufficient gate drive voltage headroom.
· It autonomously manages severe faults and reports via INTB pin and SPI interface.
· It is designed for high-reliability systems (ASIL C/D) and meets automotive AEC-Q100 Grade 1 standards.



FEATURES

· Integrated galvanic isolation.
· Low on-resistance drive transistors.
· High charging and discharging current capability.
· Rail-to-rail gate voltage control.
· Current and temperature sensing for fault management.
· Configurable undervoltage lockout (UVLO).
· Fault reporting via INTB pin and SPI interface.
· Self-test, control, and protection functions.
· AEC-Q100 Grade 1 qualified for automotive applications.



APPLICATIONS

· IGBT and SiC MOSFET gate driving.
· High-reliability automotive systems.
· Industrial power electronics.
· Fault-tolerant power systems.
· Automotive-grade power modules.



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