NXP MC33GD3100EKR2


- Part Number:
MC33GD3100EKR2
- Manufacturer:
- Category:
- RoHs:
RoHS Compliant
- Datasheet:
MC33GD3100EKR2_Datesheet
- Description:
IGBT GATE DRIVE IC
- In stock 0
DESCRIPTION
· The MC33GD3100 is a single-channel gate driver designed for IGBTs and SiC power devices.
· It features integrated galvanic isolation and low on-resistance drive transistors for high charging/discharging current and rail-to-rail gate voltage control.
· It includes current and temperature sensing to minimize IGBT stress during faults.
· The device offers configurable undervoltage lockout (UVLO) for protection and gate drive voltage headroom.
· It autonomously manages severe faults and reports via INTB pin and SPI interface.
· Suitable for high-reliability systems, meeting ASIL C/D standards and AEC-Q100 Grade 1 qualification.
FEATURES
· Integrated galvanic isolation.
· Low on-resistance drive transistors.
· High charging and discharging current capability.
· Rail-to-rail gate voltage control.
· Current and temperature sensing for fault management.
· Configurable undervoltage lockout (UVLO).
· Fault and status reporting via INTB pin and SPI interface.
· Self-test, control, and protection functions.
· ASIL C/D compliant and AEC-Q100 Grade 1 qualified.
APPLICATIONS
· Automotive power systems.
· High-reliability industrial systems.
· IGBT and SiC MOSFET gate driving.
· Systems requiring ASIL C/D compliance.
· Applications demanding AEC-Q100 Grade 1 qualification.
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