DESCRIPTION

· The MC33285 is a dual high-side TMOS driver designed to control two external N-Channel TMOS power FETs.

· It features a single input control for driving incandescent or inductive loads with PWM capability up to 1.0 kHz.

· The device includes a common internal charge pump to enhance gate voltage and external charge capacitor access.

· It provides protection against inductive load transients and short-circuit conditions with a delay time of 800 µs.

· Designed for automotive applications, it withstands reverse polarity battery and load dump transients.

FEATURES

· PWM capability for precise control.

· Short-circuit detection and protection for OUT1.

· Operates within a voltage range of 7.0 V to 40 V.

· Extended temperature range from -40°C to 125°C.

· Load dump protection and overvoltage detection with activation of OUT2.

· Single input control for both output stages.

· 100 nF capacitor connected to pin CP for charge pump operation.

· Analog input control and load leakage measurement detection.

· Pb-free packaging indicated by suffix code EF.

APPLICATIONS

· Automotive systems requiring robust power FET control.

· Driving incandescent or inductive loads in harsh environments.

· Systems needing protection against reverse polarity and load dump transients.

· Applications requiring PWM control for precise load management.