DESCRIPTION

· 1Gb, 1.8V Multiple I/O Serial NOR Flash Memory
· Stacked device with two 512Mb die
· SPI-compatible serial bus interface
· Supports Single and Double Transfer Rate (STR/DTR)
· Clock frequency up to 166 MHz (STR) and 90 MHz (DTR)
· Dual/Quad I/O commands for increased throughput up to 90 MB/s
· Supported protocols: Extended, Dual, and Quad I/O in both STR and DTR
· Execute-in-place (XIP) capability
· PROGRAM/ERASE SUSPEND operations
· Volatile and nonvolatile configuration settings
· Software reset and additional reset pin for selected part numbers
· 3-byte and 4-byte address modes for memory access beyond 128Mb
· Dedicated 64-byte OTP area outside main memory
· Erase capability: Die erase, Sector erase (64KB), Subsector erase (4KB, 32KB)
· Erase performance: 400KB/sec (64KB sector), 80KB/sec (4KB sub-sector)
· Program performance: 2MB/sec
· Security and write protection features
· Electronic signature: JEDEC-standard 3-byte signature (BB21h) and extended device ID
· JESD47H-compliant with 100,000 ERASE cycles per sector and 20 years data retention

FEATURES

· Voltage range: 1.7–2.0V
· Density: 1Gb
· Device stacking: 2 die stacked
· Device generation and die revision: B
· Pin configuration: HOLD# 1, RESET and HOLD# 8
· Sector Size: 64KB
· Packages: 24-ball T-PBGA, 16-pin SOP2, W-PDFN-8
· Security features: Standard security
· Special options: Standard, Automotive
· Operating temperature range: -40°C to +85°C, -40°C to +105°C, -40°C to +125°C

APPLICATIONS

· Suitable for applications requiring high-speed data transfer and reliable storage
· Ideal for embedded systems and IoT devices
· Automotive applications with extended temperature range
· Industrial applications with robust security features
· Consumer electronics with compact form factor requirements