Micron Technology Inc. MT47H128M16RT-25E:C TR


- Part Number:
MT47H128M16RT-25E:C TR
- Manufacturer:
- Category:
- RoHs:
RoHS Compliant
- Datasheet:
MT47H128M16RT-25E:C TR_Datesheet
- Description:
IC DRAM 2GBIT PARALLEL 84FBGA
- In stock 637
DESCRIPTION
· DDR2 SDRAM with configurations: 512 Meg x 4, 256 Meg x 8, 128 Meg x 16
· Available in various FBGA packages: 60-ball and 84-ball options
· Supports industrial temperature range: -40°C to +95°C
· RoHS-compliant and available in Pb-free and Lead solder packages
FEATURES
· Operates at 1.8V ±0.1V with JEDEC-standard 1.8V I/O
· 4 n-bit prefetch architecture and 8 internal banks for concurrent operation
· Programmable CAS latency, burst lengths, and data-output drive strength
· On-die termination (ODT) and differential data strobe (DQS, DQS#)
· DLL aligns DQ and DQS transitions with CK
· 64ms, 8192-cycle refresh and supports JEDEC clock jitter specification
APPLICATIONS
· Suitable for high-performance computing and memory-intensive applications
· Ideal for industrial environments requiring robust temperature tolerance
· Used in systems requiring low power consumption and high-speed data transfer
· Applicable in consumer electronics, networking, and embedded systems
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Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.

Micron Technology Inc.