DESCRIPTION

· DDR2 SDRAM with configurations: 512 Meg x 4, 256 Meg x 8, 128 Meg x 16.

· Available in FBGA packages with varying ball counts and dimensions.

· Supports industrial and commercial temperature ranges.

· RoHS-compliant with options for Pb-free and lead solder packages.

FEATURES

· Operates at VDD = 1.8V ±0.1V and VDDQ = 1.8V ±0.1V.

· JEDEC-standard 1.8V I/O compatible with SSTL_18.

· Features differential data strobe (DQS, DQS#) and duplicate output strobe (RDQS) for x8.

· Includes DLL for aligning DQ and DQS transitions with CK.

· Programmable CAS latency, additive latency, and burst lengths of 4 or 8.

· On-die termination (ODT) and adjustable data-output drive strength.

· 64ms, 8192-cycle refresh and supports JEDEC clock jitter specification.

APPLICATIONS

· Suitable for high-speed data processing and storage applications.

· Ideal for use in computing systems, networking hardware, and consumer electronics.

· Applicable in environments requiring robust performance under varying temperature conditions.