MT40A512M16LY‑062E IT:E Comprehensive Datasheet Summary

1. Basic Device Information

• Full Part Number: MT40A512M16LY‑062E IT:E
• Device Type: 8Gb Industrial‑grade DDR4 SDRAM
• Organization: 512M × 16‑bit (x16)
• Manufacturer: Micron Technology
• Document: 8Gb DDR4 SDRAM datasheet (Rev. L, Dec 2023)
• Status: Active
• Qualification: Industrial temperature grade (IT:E)
• Package: 96‑ball FBGA, 7.5 mm × 13.5 mm (Rev. E), Pb‑free, RoHS compliant
• Marking: LY, ‑062E, IT, E

2. Core Features

• Voltage: Core & I/O supply VDD/VDDQ = 1.2 V ± 60 mV; Boost VPP = 2.5 V −125/+250 mV
• Speed Grade: ‑062E; DDR4‑3200; tCK = 0.625 ns; CL = 22; tAA/tRCD/tRP = 13.75 ns
• Bank Architecture: 8 banks (2 bank groups × 4 banks each); 8n‑bit prefetch
• Internal Generation: On‑die adjustable VREFDQ generation
• I/O: 1.2 V pseudo open‑drain I/O
• Refresh: 8192‑cycle refresh; temperature‑compensated refresh (TCR)
• Reliability: Data Bus Inversion (DBI), Write CRC, CA Parity, Per‑DRAM Addressability (PDA)
• Power: Self refresh, Low‑Power Auto Self Refresh (LPASR), Self Refresh Abort
• Signal Integrity: Nominal/park/dynamic On‑Die Termination (ODT), ZQ calibration
• Compliance: JEDEC JESD79‑4 standard

3. Addressing & Page Size

4. Speed & Timing Parameters

5. Operating Conditions

5.1 Temperature Ranges (Industrial, IT:E)

• Operating Case Temp (TC): −40 °C to +95 °C
• Storage Temp: −65 °C to +150 °C
• Refresh Intervals (8192 cycles):

5.2 Voltage Ratings

• VDD/VDDQ: 1.14 V to 1.26 V
• VPP: 2.375 V to 2.75 V
• Absolute Max Voltage: −0.5 V to 1.4 V for inputs/outputs

6. Pin Configuration (96‑Ball FBGA, Top View)

Key pins:

• Differential Clock: CK_t, CK_c
• Control: CKE, CS_n, ACT_n, RAS_n/A16, CAS_n/A15, WE_n/A14
• Address: A[17:0], BG0, BA[1:0], A10/AP, A12/BC_n
• Data: DQ[15:0], LDQS_t/LDQS_c, UDQS_t/UDQS_c
• Data Control: LDBI_n/LDM_n, UDBI_n/UDM_n
• Power: VDD, VDDQ, VPP, VSS, VSSQ, VREFCA
• Misc: RESET_n, ODT, PAR, ALERT_n, ZQ, TEN

7. Functional Description

7.1 Core Operation

• Architecture: 8n‑bit prefetch; double‑data‑rate transfer at I/O
• Commands: ACTIVATE, READ/WRITE, PRECHARGE, REFRESH, Self Refresh, MRS, ZQ Calibration
• Mode Registers: MR0–MR6 control timing, ODT, power, latency, CRC, DBI, parity, refresh modes
• MPR: Multipurpose Register for test, calibration, and status readback

7.2 Key Functions

• Write Leveling: For DIMM signal integrity
• Dynamic ODT: Adjustable termination during writes
• CAL: Command/Address Latency for power saving
• CRC: Write data cyclic redundancy check
• DBI: Data Bus Inversion for noise reduction
• CA Parity: Command/address parity protection
• PDA: Per‑DRAM Addressability for individual DRAM tuning
• PPR: Post Package Repair (soft sPPR supported)

8. Absolute Maximum Ratings

• Supply Voltage (VDD/VDDQ): −0.5 V to 1.4 V
• Input/Output Voltage: −0.5 V to 1.4 V
• DC Input Current: ± 150 mA
• Power Dissipation: 1.2 W
• Storage Temperature: −65 °C to +150 °C

9. Recommended Operating Conditions

• VDD/VDDQ: 1.14 V – 1.26 V
• VPP: 2.375 V – 2.75 V
• Ambient Temp (TA): −40 °C to +95 °C
• Clock Frequency: Up to 1600 MHz (3200 MT/s)
• Input Slew Rate: Compliant with JEDEC DDR4 specs

10. Electrical Characteristics

10.1 DC Parameters

• Input Leakage: ± 1 μA max
• Quiescent Current: Low active & standby currents
• ODT Impedance: Programmable 34/40/48/60/80/120/240 Ω
• Output Driver: 34/48 Ω programmable impedance

10.2 AC Parameters

• Propagation Delay: tAA = 13.75 ns
• CAS Latency: CL = 22
• Min Clock Pulse Width: Compliant with DDR4‑3200
• Data Setup/Hold: Compliant with JEDEC

11. Package & Mechanical Data

• Package: 96‑ball FBGA
• Dimensions: 7.5 mm × 13.5 mm × 1.20 mm
• Ball Pitch: Standard FBGA
• Solder Ball: SAC302 (Pb‑free)
• Moisture Sensitivity: MSL 3
• Thermal Resistance: RθJA ~ 45 °C/W (typical)

12. Ordering & Packaging

• Orderable Part: MT40A512M16LY‑062E IT:E
• Package Code: LY (96‑ball FBGA, 7.5 × 13.5 mm Rev. E)
• Speed: ‑062E (DDR4‑3200, CL22)
• Temperature: IT (Industrial, −40 °C to 95 °C)
• Revision: E
• Packing: Tape‑and‑reel, 2000 units per reel

13. Key Applications

• Industrial computing & automation
• Industrial servers & embedded systems
• Automotive infotainment (non‑safety)
• Networking & telecom infrastructure
• Ruggedized embedded designs