SFH 9201-3/4-Z Model Information

Overview

The SFH 9201-3/4-Z is a reflective interrupter designed for applications requiring precise position reporting, end position switching, speed monitoring, and motion sensing. It features an IR-GaAs emitter combined with a silicon NPN phototransistor, optimized for an operating distance of 1mm to 5mm. This model is suitable for industrial and commercial applications.

Key Features

• IR-GaAs Emitter: Combined with a silicon NPN phototransistor.
• Optimal Operating Distance: 1mm to 5mm.
• Daylight Cut-Off Filter: Enhances performance in ambient light conditions.
• Low Saturation Voltage: Ensures efficient operation.
• Emitter and Detector Isolation: Electrically isolated for reliable performance.
• Soldering Method: IR Reflow Soldering.
• Preconditioning: According to JEDEC Level 4.
• Replacement: SFH 9206.

Applications

• Position Reporting: Accurate position sensing.
• End Position Switch: Reliable end-of-travel detection.
• Speed Monitoring and Regulation: Precise speed control.
• Motion Sensing: Detects movement and changes in position.

Ordering Information

• Model Number: SFH 9201-3/4-Z
• Description: Reflective interrupter with an IR-GaAs emitter and silicon NPN phototransistor.
• Ordering Code: Q65110A2716
• Collector-Emitter Current (IPCE): 630 to 2000 µA (typical)

Specifications

• Emission Wavelength (λpeak): 950 nm
• Forward Voltage (VF): 1.25 V (≤ 1.65 V at IF = 50 mA)
• Reverse Current (IR): 0.01 µA (≤ 1 µA at VR = 5 V)
• Capacitance (C0): 25 pF (at VR = 0 V, f = 1 MHz)
• Collector-Emitter Saturation Voltage (VCEsat): 150 mV (< 600 mV at IF = 10 mA, IC = 85 µA, d = 1 mm)
• Turn-On Time (ton): 65 µs (at VCC = 5 V, IC = 1 mA, RL = 1 kΩ)
• Rise Time (tr): 50 µs (at VCC = 5 V, IC = 1 mA, RL = 1 kΩ)
• Turn-Off Time (toff): 55 µs (at VCC = 5 V, IC = 1 mA, RL = 1 kΩ)
• Fall Time (tf): 50 µs (at VCC = 5 V, IC = 1 mA, RL = 1 kΩ)

Mechanical and Packaging Information

• Package Outline: 6.2 mm (0.244") x 5.8 mm (0.228") x 4.2 mm (0.165") x 3.8 mm (0.150") x 3.4 mm (0.134") x 3.0 mm (0.118")
• Chip Position: Sender/Emitter and Receiver/Empfänger
• Pin Configuration:Pin 1: AnodePin 2: Not ConnectedPin 3: EmitterPin 4: CollectorPin 5: Not ConnectedPin 6: Cathode

Recommended Solder Pad Design

• Pad Geometry: For improved heat dissipation, use Cu-area > 5 mm².
• Solder Stop Plating: Recommended for optimal performance.

Reflow Soldering Profile

• Ramp-Up Rate to Preheat: 2 K/s to 3 K/s (25°C to 150°C)
• Preheat Time: 60 s to 120 s
• Ramp-Up Rate to Peak: 2 K/s to 3 K/s
• Liquidus Temperature: 217°C
• Time Above Liquidus Temperature: 80 s to 100 s
• Peak Temperature: 245°C to 260°C
• Time Within 5°C of Peak Temperature: 10 s to 20 s
• Ramp-Down Rate: 3 K/s to 6 K/s (245°C to 100°C)
• Cooling Time: 480 s

Important Notes

• Data for Reference: The data provided in this spec sheet are for reference only. Performance characteristics can vary depending on the environment or measurement conditions.
• Changes Without Notice: OSRAM Opto Semiconductors reserves the right to make changes to the data at any time without notice.
• Final Selection: Before making a final selection, please check the product specifications in detail.