Toshiba Semiconductor and Storage TCK424G,L3F

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Specifications
Type
Paramete
Type
Paramete
Logic Voltage - VIL, VIH
0.4V, 1.2V
Package / Case
6-XFBGA, WLCSP
Voltage - Supply
2.7V ~ 28V
Number of Drivers
1
Qualification
-
Current - Peak Output (Source, Sink)
-
Input Type
Non-Inverting
Supplier Device Package
6-WCSPG (0.8x1.2)
High Side Voltage - Max (Bootstrap)
-
Gate Type
N-Channel MOSFET
Grade
-
Channel Type
Single
Rise / Fall Time (Typ)
-
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 85°C (TA)
Driven Configuration
High-Side
Overview

DESCRIPTION

· TCK42xG series is an Over Voltage Protection Gate Driver IC for external N-channel MOSFETs.
· Supports MOSFET operation in a wide voltage range from 2.7 V to 28 V with various Over Voltage Lock Out options.
· Features low standby current (less than 1 µA), built-in charge pump circuit, and MOSFET gate-source protection circuit.
· Compact WCSP6G package (1.2 mm x 0.8 mm, thickness: 0.35 mm) suitable for mobile, wearable systems, and power management circuits like load switch applications.



FEATURES

· Gate driver for N-channel Common Drain MOSFET.
· Gate driver for N-channel Single High side MOSFET.
· High maximum input voltage: VIN max = 40 V.
· Wide input voltage operation: VIN = 2.7 to 28 V.
· Gate-Source protection circuit.
· Over Voltage Lock Out: VIN_OVLO = 6.31 V, 10.83 V, 14.29 V, 23.26 V, and 27.73 V.
· Under Voltage Lock Out: VIN_UVLO = 2.0 V.
· Built-in Charge pump circuit: Gate source voltage VGS = 5.6 V and 10 V.
· Low standby current: IQ(OFF) = 0.9 µA max at VIN = 12 V (except TCK424G, TCK425G).
· WCSP6G weight: 0.61 mg.



APPLICATIONS

· Load switch circuit for mobile, wearable, and IoT equipment.

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