Toshiba Semiconductor and Storage TCK425G,L3F

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Specifications
Type
Paramete
Type
Paramete
Channel Type
Single
Grade
-
High Side Voltage - Max (Bootstrap)
-
Gate Type
N-Channel MOSFET
Qualification
-
Number of Drivers
1
Package / Case
6-XFBGA, WLCSP
Input Type
Non-Inverting
Voltage - Supply
2.7V ~ 28V
Logic Voltage - VIL, VIH
0.4V, 1.2V
Supplier Device Package
6-WCSPG (0.8x1.2)
Operating Temperature
-40°C ~ 85°C (TA)
Current - Peak Output (Source, Sink)
-
Rise / Fall Time (Typ)
-
Driven Configuration
High-Side
Mounting Type
Surface Mount
Overview

DESCRIPTION



· TCK42xG Series is a CMOS Linear Integrated Circuit designed for Over Voltage Protection in N-channel MOSFETs.

· Operates within a wide voltage range from 2.7V to 28V, featuring various Over Voltage Lock Out options.

· Includes a built-in charge pump and MOSFET gate-source protection circuit.

· Features a compact WCSP6G package, ideal for mobile, wearable systems, and power management circuits.



FEATURES



· Drives N-channel Common Drain and Single High side MOSFETs.

· Supports high maximum input voltage up to 40V.

· Equipped with Gate-Source protection and Over Voltage Lock Out features.

· Includes a built-in charge pump providing gate source voltages of 5.6V and 10V.

· Low standby current, typically less than 1µA.



APPLICATIONS



· Suitable for load switch circuits in mobile, wearable, and IoT devices.

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