Broadcom Limited VMMK-1225-TR1G

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  • Part Number:

    VMMK-1225-TR1G

  • Manufacturer:

    Broadcom Limited

  • Category:

    RF FETs, MOSFETs

  • RoHs:

    rohs Non-RoHS Compliant

  • Datasheet:

    pdf VMMK-1225-TR1G_Datesheet

  • Description:

    RF MOSFET E-PHEMT 2V 0402

  • In stock 0
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Specifications
Type
Paramete
Type
Paramete
Qualification
-
Current Rating (Amps)
50mA
Current - Test
20 mA
Frequency
12GHz
Gain
11dB
Grade
-
Power - Output
8dBm
Voltage - Test
2 V
Configuration
-
Package / Case
0402 (1005 Metric)
Mounting Type
-
Noise Figure
1dB
Supplier Device Package
0402
Technology
E-pHEMT
Voltage - Rated
5 V
Overview

DESCRIPTION

· Avago Technologies' VMMK-1225 is a 0.5 to 26 GHz Low Noise E-PHEMT in a Wafer Scale Package, combining E-pHEMT technology with a chip scale package. It offers high dynamic range, high gain, and low noise figure, operating on a single DC power supply. The GaAsCap wafer scale package is ultra-thin and compatible with standard 0402 pick and place assembly. It features 0.25 micron gates for ultra-low noise figure and flat transconductance, ensuring excellent linearity and power output. The device is designed for easy use with positive DC voltages and simple impedance matching to 50 Ω systems.



FEATURES

· Sub-miniature 0402 (1mm x 0.5mm) Surface Mount Leadless Package
· Low height (0.25mm)
· Frequency Range DC to 26.5 GHz
· Enhancement Mode with 0.25 micron gate length
· Tape and Reel packaging option available
· 0.87dB Fmin, 11dB Ga, +23 dBm output 3rd order intercept, +8 dBm output power



APPLICATIONS

· 2.4 GHz, 3.5GHz, 5-6GHz WLAN and WiMax notebook computer, access point, and mobile wireless applications
· DBS 10 to 13 GHz receivers
· VSAT and SATCOM 13 to 18 GHz systems
· 802.16 & 802.20 BWA systems
· WLL and MMDS Transceivers
· General purpose discrete E-pHEMT for ultra low noise applications



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