Winbond Electronics W25N01GVZEIG

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  • Part Number:

    W25N01GVZEIG

  • Manufacturer:

    Winbond Electronics

  • Category:

    Display Drivers

  • RoHs:

    rohs RoHS Compliant

  • Datasheet:

    pdf W25N01GVZEIG_Datesheet

  • Description:

    IC FLASH 1GBIT SPI/QUAD 8WSON

  • In stock 0
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Specifications
Type
Paramete
Type
Paramete
Supplier Device Package
8-WSON (8x6)
Write Cycle Time - Word, Page
700µs
Memory Format
FLASH
Package / Case
8-WDFN Exposed Pad
Mounting Type
Surface Mount
Qualification
-
Memory Size
1Gbit
Memory Interface
SPI - Quad I/O
Voltage - Supply
2.7V ~ 3.6V
Memory Type
Non-Volatile
Operating Temperature
-40°C ~ 85°C (TA)
Grade
-
Technology
FLASH - NAND (SLC)
Access Time
7 ns
Memory Organization
128M x 8
Clock Frequency
104 MHz
Overview

W25N01GVZEIG Complete Supplementary Datasheet Summary


1. Basic Device Identification


  • Full Part Number: W25N01GVZEIG
  • Manufacturer: Winbond Electronics
  • Device Type: 1G-bit (128M-Byte) SLC Serial NAND Flash Memory
  • Product Family: W25N01GV Series
  • Status: Active, Production
  • RoHS/Compliance: Lead-free, Halogen-free, Green, RoHS compliant
  • Top Marking: 25N01GVZEIG
  • Voltage: Single 2.7V – 3.6V supply
  • Temperature Grade: Industrial (I): −40°C to +85°C
  • Interface: Standard SPI, Dual SPI, Quad SPI (QSPI)

2. Package & Mechanical Specifications


  • Package Type: 8-pad WSON (Package Code ZE)
  • Dimensions: 8.0 mm × 6.0 mm × 0.75 mm (nominal)
  • Pin Pitch: 1.27 mm BSC
  • Mounting: Surface-mount (SMT)
  • Exposed Pad: Exposed thermal pad (EP), floating or connectable to GND
  • Moisture Sensitivity Level: Industry standard for WSON

3. Memory Architecture


  • Total Density: 1G-bit (134,217,728 bytes)
  • Page Size: 2048 bytes main + 64 bytes spare = 2112 bytes
  • Block Size: 64 pages = 128 KB
  • Number of Blocks: 1024 blocks
  • Valid Blocks: Min 1004 guaranteed at shipment
  • Organization: 65,536 programmable pages

4. Key Performance Parameters


  • Clock Frequency: Up to 104 MHz (STR)
  • Equivalent Speed: Dual I/O 208 MHz; Quad I/O 416 MHz
  • Continuous Data Rate: Up to 50 MB/s
  • Endurance: 100,000+ program/erase cycles
  • Data Retention: 10+ years
  • Page Program Time: Typ 250 µs, Max 700 µs
  • Block Erase Time: Typ 2 ms, Max 10 ms
  • Page Read Time: Max 60 µs (ECC enabled)
  • Partial Page Programs: 4 times per page

5. Power Characteristics


  • Active Current (Read/Program/Erase): Max 35 mA, Typ 25 mA
  • Standby Current: Typ 10 µA; Max 50 µA @ 85°C
  • Supply Voltage (VCC): 2.7 V to 3.6 V
  • Logic Levels:

6. Pin Configuration (8‑Pad WSON ZE, Top View)

表格


Pad No.Pin NameI/O TypeFunction
1/CSInputChip Select (active low)
2DO (IO1)I/OData I/O 1
3/WP (IO2)I/OWrite Protect / Data I/O 2
4GNDGroundGround
5DI (IO0)I/OData I/O 0
6CLKInputSerial Clock
7/HOLD (IO3)I/OHold / Data I/O 3
8VCCPowerPower Supply

7. Core Features


  • On-chip 1-bit ECC: Automatic error correction, enabled by default
  • Read Modes:
  • Bad Block Management: Internal LUT supports up to 20 block replacements
  • Write Protection: Software (BP bits) + Hardware (/WP pin) + Power Lock + OTP Lock
  • Hold Function: Pause SPI operations without deselecting
  • OTP Area: 10 × 2112-byte OTP pages; permanent lockable
  • Unique ID & Parameter Pages: Factory-programmed read-only pages
  • Software Reset: Device reset via instruction (FFh)
  • Status Registers: SR‑1 (Protection), SR‑2 (Config), SR‑3 (Status)

8. Protection & Security


  • Block Protection: BP[3:0] + TB bits protect selectable memory ranges
  • Status Register Protection: SRP[1:0] for software/hardware/power/OTP lock
  • OTP Lock: OTP‑L bit permanently locks OTP pages
  • Power‑Up Lock: All write operations disabled until VCC stable + tPUW delay
  • Write Enable Latch (WEL): Must be set before program/erase

9. Supported Key Instructions


  • Read JEDEC ID (9Fh), Read Status (05h/0Fh), Write Status (01h/1Fh)
  • Write Enable (06h), Write Disable (04h)
  • Block Erase (D8h), Page Data Read (13h), Read Data (03h), Fast Read (0Bh)
  • Dual/Quad I/O Fast Read (3Bh, 6Bh, BBh, EBh)
  • Load Program Data (02h, 84h, 32h, 34h), Program Execute (10h)
  • Bad Block Management (A1h), Read BBM LUT (A5h)
  • Device Reset (FFh)

10. Reliability & Quality


  • ESD Rating: ±2000 V (HBM)
  • Invalid Block Management: Built‑in bad block marking and handling
  • Error Monitoring: ECC status, P‑FAIL, E‑FAIL, BUSY bits
  • Thermal Handling: −40°C to +85°C (ambient); −65°C to +150°C storage

11. Typical Applications


  • Code shadowing to RAM
  • Embedded system firmware & data storage
  • Industrial control, IoT, consumer electronics
  • Portable devices with limited PCB space
  • XIP (eXecute In Place) via Quad SPI


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