Diotec Semiconductor 2SA1012R

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Specifications
Type
Paramete
Type
Paramete
Power - Max
15 W
Vce Saturation (Max) @ Ib, Ic
400mV @ 150mA, 3A
Current - Collector Cutoff (Max)
1µA (ICBO)
Current - Collector (Ic) (Max)
5 A
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 1A, 1V
Voltage - Collector Emitter Breakdown (Max)
50 V
Grade
-
Operating Temperature
150°C (TJ)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package
TO-252 (DPAK)
Frequency - Transition
60MHz
Qualification
-
Mounting Type
Surface Mount
Overview

DESCRIPTION



· The document provides detailed specifications and operational guidelines for a specific electronic component or system.

· It includes technical data, performance characteristics, and configuration options essential for integration and application.



FEATURES



· High efficiency and reliability under various operational conditions.

· Compact design with advanced integration capabilities.

· Supports multiple communication protocols for versatile connectivity.

· Enhanced security features to protect data integrity and confidentiality.



APPLICATIONS



· Suitable for use in industrial automation and control systems.

· Ideal for consumer electronics requiring robust performance and compact size.

· Applicable in telecommunications infrastructure for reliable data transmission.

· Used in automotive electronics for enhanced safety and connectivity features.



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