Nexperia USA Inc. 74LVCV2G66GM,125

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Specifications
Type
Paramete
Type
Paramete
Channel Capacitance (CS(off), CD(off))
8pF
Channel-to-Channel Matching (ΔRon)
-
Crosstalk
-55dB @ 1MHz
Supplier Device Package
8-XQFN (1.6x1.6)
Switch Circuit
SPST - NO
-3db Bandwidth
210MHz
Number of Circuits
2
On-State Resistance (Max)
10Ohm
Mounting Type
Surface Mount
Voltage - Supply, Single (V+)
2.3V ~ 5.5V
Package / Case
8-XFQFN Exposed Pad
Current - Leakage (IS(off)) (Max)
10µA
Charge Injection
0.0035pC
Grade
-
Switch Time (Ton, Toff) (Max)
5ns, 9ns
Operating Temperature
-40°C ~ 125°C (TA)
Multiplexer/Demultiplexer Circuit
1:1
Qualification
-
Voltage - Supply, Dual (V±)
-
Overview

DESCRIPTION

· The 74LVCV2G66 is a low-power, low-voltage, high-speed Si-gate CMOS device.

· It features two single pole single throw analog or digital switches.

· Each switch includes overvoltage tolerant input/output and low-power active HIGH enable input.

· The device allows switching of signals exceeding VCC without current limiting resistors.



FEATURES

· Wide supply voltage range: 2.3 V to 5.5 V.

· Ultra low-power operation with very low ON resistance.

· 5 V tolerant input for interfacing with 5 V logic.

· High noise immunity and CMOS low-power consumption.

· Latch-up performance exceeds 250 mA.

· ESD protection: HBM exceeds 2000 V, CDM exceeds 1000 V.

· Operates from -40 °C to +125 °C.



APPLICATIONS

· Portable applications due to low-power enable input.

· Signal switching in environments with overvoltage conditions.

· Interfaces requiring high noise immunity and low ON resistance.



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