Advanced Linear Devices Inc. ALD1102BPAL

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Specifications
Type
Paramete
Type
Paramete
FET Feature
-
Operating Temperature
0°C ~ 70°C (TJ)
Configuration
2 P-Channel (Dual) Matched Pair
Power - Max
500mW
Gate Charge (Qg) (Max) @ Vgs
-
Technology
MOSFET (Metal Oxide)
Mounting Type
Through Hole
Package / Case
8-DIP (0.300", 7.62mm)
Rds On (Max) @ Id, Vgs
270Ohm @ 5V
Vgs(th) (Max) @ Id
1.2V @ 10µA
Qualification
-
Drain to Source Voltage (Vdss)
10.6V
Input Capacitance (Ciss) (Max) @ Vds
10pF @ 5V
Grade
-
Current - Continuous Drain (Id) @ 25°C
-
Supplier Device Package
8-PDIP
Overview

DESCRIPTION

· The ALD1102 is a monolithic dual P-channel matched transistor pair for analog applications.
· Manufactured with Advanced Linear Devices' enhanced ACMOS silicon gate CMOS process.
· Features high input impedance and negative current temperature coefficient.
· Matched for minimum offset voltage and differential thermal response.
· Designed for switching and amplifying in -2V to -10V systems with low input bias current, low input capacitance, and fast switching speed.
· Suitable for precision applications requiring high current gain, such as current mirrors and sources.
· Can be used with ALD1101 to construct a dual CMOS analog switch.
· Ideal for differential amplifier input stages, transmission gates, and multiplexer applications.



FEATURES

· Low threshold voltage of 0.7V.
· Low input capacitance.
· Low Vos grades: 2mV, 5mV, 10mV.
· High input impedance: 10^12Ω typical.
· Low input and output leakage currents.
· Negative current (IDS) temperature coefficient.
· Enhancement-mode (normally off).
· DC current gain of 10^9.
· RoHS compliant.



APPLICATIONS

· Precision current mirrors.
· Precision current sources.
· Analog switches.
· Choppers.
· Differential amplifier input stage.
· Voltage comparator.
· Data converters.
· Sample and Hold.
· Analog inverter.

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