DESCRIPTION

· ALD114835/ALD114935 are high precision monolithic quad/dual depletion mode N-Channel MOSFETs.

· Designed for low voltage, small signal applications.

· Excellent functional replacements for normally-closed relay applications.

· Operate in resistance mode for low drain voltage and current source mode for higher voltage levels.

· Exceptional device electrical characteristics matching and temperature tracking.

· Suitable for precision applications requiring high current gain.

FEATURES

· Depletion mode (normally ON).

· Precision Gate Threshold Voltages: -3.50V +/- 0.05V.

· Nominal R DS(ON) @ V GS = 0.0V of 540 Ω.

· Matched MOSFET-to-MOSFET characteristics.

· Tight lot-to-lot parametric control.

· Low input capacitance.

· VGS(th) match (V OS) — 20mV.

· High input impedance — 1012Ω typical.

· Positive, zero, and negative V GS(th) temperature coefficient.

· DC current gain >108.

· Low input and output leakage currents.

APPLICATIONS

· Functional replacement of Form B (NC) relay.

· Zero power fail safe circuits.

· Backup battery circuits.

· Power failure detector.

· Fail safe signal detector.

· Source followers and buffers.

· Precision current mirrors and sources.

· Capacitive probes and sensor interfaces.

· Charge detectors and integrators.

· Differential amplifier input stage.

· High side switches and peak detectors.

· Sample and Hold, Alarm systems.

· Current multipliers, Analog switches, and multiplexers.

· Voltage comparators and Level shifters.