DESCRIPTION

· The ALD210808A/ALD210808 is a precision enhancement mode N-Channel EPAD® MOSFET array, designed for low voltage, low power small signal applications.

· It features precision threshold voltage, enabling circuit designs with input/output signals referenced to GND at enhanced operating voltage ranges.

· The device is built on a single monolithic chip, exhibiting excellent temperature tracking characteristics and versatile for a broad range of analog small signal applications.

FEATURES

· Precision V GS(th) = +0.80V +0.010V.

· Sub-threshold voltage (nano-power) operation with < 800mV min. operating voltage.

· High transconductance and output conductance, low R DS(ON) of 25Ω, and output current > 50mA.

· Matched and tracked tempco, tight lot-to-lot parametric control, and low input capacitance and leakage currents.

APPLICATIONS

· Low overhead current mirrors and current sources, zero power normally-on circuits, and energy harvesting detectors.

· Very low voltage analog and digital circuits, zero power fail-safe circuits, and backup battery circuits & power failure detector.

· Matched source followers and buffers, precision current mirrors and current sources, and matched capacitive probes and sensor interfaces.

· High gain differential amplifier input stage, matched peak-detectors and level-shifters, and multiple channel sample-and-hold switches.