Advanced Linear Devices Inc. ALD310708APCL

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Specifications
Type
Paramete
Type
Paramete
Supplier Device Package
16-PDIP
Current - Continuous Drain (Id) @ 25°C
-
Qualification
-
Mounting Type
Through Hole
Technology
MOSFET (Metal Oxide)
Grade
-
Power - Max
500mW
Vgs(th) (Max) @ Id
780mV @ 1µA
FET Feature
-
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
2.5pF @ 5V
Operating Temperature
0°C ~ 70°C
Drain to Source Voltage (Vdss)
8V
Rds On (Max) @ Id, Vgs
-
Configuration
4 P-Channel, Matched Pair
Package / Case
16-DIP (0.300", 7.62mm)
Overview

DESCRIPTION

· ALD310708A/ALD310708 are high precision monolithic quad P-Channel MOSFET arrays.

· Matched at the factory using ALD's EPAD® CMOS technology.

· Features precision -0.80V Gate Threshold Voltage for low voltage applications.

· High input impedance (2.5 x 10^10Ω) and high DC current gain (>10^8).

· Designed for exceptional matching of device electrical characteristics.

· Versatile for precision analog applications like current mirrors, differential amplifiers, and multiplexers.



FEATURES

· Precision matched Gate Threshold Voltages with typical offset voltages of 1mV (ALD310708A) and 2mV (ALD310708).

· Sub-threshold voltage operation with a minimum operating voltage of less than 0.8V.

· Ultra-low minimum operating current of less than 1nA.

· Matched transconductance and output conductance.

· Excellent temperature tracking characteristics.

· Tight lot-to-lot parametric control.



APPLICATIONS

· Precision current mirrors and current sources with 0.5% accuracy.

· Low Tempco (<= 50ppm/°C) current mirrors/sources.

· Energy harvesting circuits and very low voltage analog and digital circuits.

· Precision low level voltage-clamps and zero-crossing detectors.

· Source followers, buffers, and discrete differential amplifier input stages.

· High-side switches, Sample-and-Hold switches, and discrete analog switches/multiplexers.



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