Name: AMD560C-CT
Brand: Analog Technologies
SKU: JM-AMD560C-CT
Availability: InStock

Analog Technologies AMD560C-CT

View All FET, MOSFET Arrays by Analog Technologies

Part Number:
AMD560C-CT
Manufacturer:
Analog Technologies
Category:
FET, MOSFET Arrays
RoHs:
RoHS Compliant
Datasheet:
AMD560C-CT_Datesheet
Description:
MOSFET N/P-CH 60V 35A TO252
In stock 2,000

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Specifications

Type

Paramete

Type

Paramete

Input Capacitance (Ciss) (Max) @ Vds

1422pF @ 15V, 1143pF @ 15V

Vgs(th) (Max) @ Id

1V @ 250µA

Grade

Configuration

N and P-Channel

Qualification

Operating Temperature

-55°C ~ 175°C (TJ)

Supplier Device Package

TO-252-4

Rds On (Max) @ Id, Vgs

24mOhm @ 20A, 10V, 85mOhm @ 10A, 10V

Package / Case

TO-252-5, DPAK (4 Leads + Tab), TO-252AD

Technology

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C

35A (Tc), 20A (Tc)

Mounting Type

Surface Mount

Drain to Source Voltage (Vdss)

60V

FET Feature

Gate Charge (Qg) (Max) @ Vgs

9nC @ 4.5V, 10nC @ 4.5V

Power - Max

50W (Tc)

Overview

Analog Power AMD560C-CT N & P-Channel 60-V MOSFET Model Information

Product Summary:Type: N & P-Channel MOSFETVoltage Rating: 60V (Drain-Source Voltage)Current Rating:N-Channel: Continuous Drain Current (ID) = 35AP-Channel: Continuous Drain Current (ID) = -20A
Key Features:Low rDS(on) trench technologyLow thermal impedanceFast switching speed
Typical Applications:White LED boost convertersAutomotive systemsIndustrial DC/DC conversion circuits
Absolute Maximum Ratings (TA = 25°C unless otherwise noted):Drain-Source Voltage (VDS): 60V (N-Channel), -60V (P-Channel)Gate-Source Voltage (VGS): ±20VContinuous Drain Current (ID) at TC=25°C: 35A (N-Channel), -20A (P-Channel)Pulsed Drain Current (IDM): 140A (N-Channel), -80A (P-Channel)Power Dissipation (PD) at TC=25°C: 50W (both N and P-Channel)Operating Junction and Storage Temperature Range: -55°C to 175°C
Thermal Resistance Ratings:Maximum Junction-to-Ambient (RθJA): 50°C/WMaximum Junction-to-Case (RθJC): 3°C/W
Electrical Characteristics:N-Channel:On-Resistance (rDS(on)): 28 mΩ at VGS = 10VGate-Source Threshold Voltage (VGS(th)): 1VZero Gate Voltage Drain Current (IDSS): 45A at VDS = 5V, VGS = 10VTotal Gate Charge (Qg): 9 nCP-Channel:On-Resistance (rDS(on)): 35 mΩ at VGS = -4.5VGate-Source Threshold Voltage (VGS(th)): -1VZero Gate Voltage Drain Current (IDSS): -25A at VDS = -5V, VGS = -10VTotal Gate Charge (Qg): 10 nC
Typical Electrical Characteristics:Input Capacitance (Ciss): 1422 pF (N-Channel), 1143 pF (P-Channel)Output Capacitance (Coss): 84 pF (both N and P-Channel)Reverse Transfer Capacitance (Crss): 79 pF (N-Channel), 60 pF (P-Channel)
Package Information:The AMD560C-CT is available in a suitable package for efficient thermal management and performance.

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