Model Information for AS4C16M16SA-6TIN

Basic Information

• Manufacturer: Alliance Memory Inc.
• Model Number: AS4C16M16SA-6TIN
• Document Number: DS36599 Rev. 3.0
• Date: March 2015
• Website: www.alliancememory.com

Description

The AS4C16M16SA-6TIN is a 256Mb (16Mx16bit) Synchronous DRAM (SDRAM) designed for high-speed CMOS synchronous DRAM applications. It features an internal pipelined architecture, programmable mode registers, and a wide operating temperature range suitable for industrial applications.

Features

• Fast Access Time: 5 ns (from clock)
• High Clock Rate: 166 MHz
• Fully Synchronous Operation
• Internal Pipelined Architecture
• 4 Banks of 4M words x 16-bit
• Programmable Mode Registers:CAS Latency: 2 or 3Burst Length: 1, 2, 4, 8, or full pageBurst Type: Sequential or InterleavedBurst Stop Function
• Operating Temperature Range:Industrial: -40°C to 85°C
• Auto Refresh and Self Refresh
• 8192 Refresh Cycles/64ms
• CKE Power Down Mode
• Single +3.3V ±0.3V Power Supply
• Interface: LVTTL
• Package: 54-pin TSOP II
• Compliant with RoHS and Halogen-Free Standards

Applications

• High-Performance PCs
• Graphics Cards
• Switching Power Supplies
• Industrial Control Systems
• Embedded Systems

Key Specifications

• Clock Cycle Time (tCK3): 6 ns
• Access Time from CLK (tAC3): 5 ns
• Row Active Time (tRAS): 42 ns
• Row Cycle Time (tRC): 60 ns

Ordering Information

• Part Number: AS4C16M16SA-6TIN
• Frequency: 166 MHz
• Package: 54-pin TSOP II
• Temperature Range: Industrial (-40°C to 85°C)
• Lead-Free and Halogen-Free: Yes

Pin Assignment (Top View)

TSOP II Package

TableCopy

Block Diagram

The block diagram illustrates the internal architecture of the SDRAM, including the clock buffer, command decoder, address buffer, refresh counter, and the four banks of 4M words x 16-bit cell arrays.

Pin Descriptions

• CLK: Clock input, all input signals are sampled on the positive edge of CLK.
• CKE: Clock Enable, activates or deactivates the CLK signal.
• BA0, BA1: Bank Address inputs, select the bank for operation.
• A0-A12: Address inputs, used for row and column addressing.
• CS#: Chip Select, enables or disables the command decoder.
• RAS#: Row Address Strobe, defines operation commands.
• CAS#: Column Address Strobe, defines operation commands.
• WE#: Write Enable, defines operation commands.
• LDQM, UDQM: Data Mask inputs, control output buffers in read mode and mask input data in write mode.
• DQ0-DQ15: Data I/O pins, synchronized with the positive edge of CLK.
• NC: No Connect, should be left unconnected.
• VDDQ: Data Power Supply, isolated power for DQs.
• VSSQ: Data Ground, isolated ground for DQs.
• VDD: Power Supply, +3.3V ±0.3V.
• VSS: Ground.

Operation Modes

The SDRAM supports various operation modes, including:

• BankActivate: Activates a bank for operation.
• Read/Write: Performs read or write operations in an active bank.
• Precharge: Precharges a bank to switch it to the idle state.
• AutoRefresh: Refreshes the memory.
• SelfRefresh: Enters self-refresh mode for data retention.
• PowerDown: Enters power-down mode to reduce power consumption.

Absolute Maximum Ratings

• Input/Output Voltage (VIN, VOUT): -1.0V to 4.6V
• Power Supply Voltage (VDD, VDDQ): -1.0V to 4.6V
• Ambient Temperature (TA): Industrial (-40°C to 85°C)
• Storage Temperature (TSTG): -55°C to 150°C
• Soldering Temperature (TSOLDER): 260°C (10-second max)
• Power Dissipation (PD): 1W
• Short Circuit Output Current (IOS): 50mA

Recommended Operating Conditions

• Power Supply Voltage (VDD, VDDQ): 3.0V to 3.6V
• LVTTL Input High Voltage (VIH): 2.0V to 3.0V
• LVTTL Input Low Voltage (VIL): -0.3V to 0.8V
• Input Leakage Current (IIL): ±10µA
• Output Leakage Current (IOL): ±10µA
• LVTTL Output "H" Level Voltage (VOH): 2.4V