Adesto Technologies AT25DF081A-SH-T


- Part Number:
AT25DF081A-SH-T
- Manufacturer:
- Category:
- RoHs:
RoHS Compliant
- Datasheet:
AT25DF081A-SH-T_Datesheet
- Description:
IC FLASH 8MBIT SPI 100MHZ 8SOIC
- In stock 866
AT25DF081A-SH-T Model Information
Basic Information
- Manufacturer: Renesas Electronics Corporation
- Product Family: Serial Flash Memory
- Device Density: 8-megabit (1MB)
- Interface: SPI (Serial Peripheral Interface)
- Operating Voltage: 2.7V to 3.6V
- Maximum Frequency: 100 MHz (RapidS Operation), 85 MHz (SPI Operation)
- Temperature Range: Industrial (-40°C to +85°C)
Package Information
- Package Type: 8-lead, 0.208" wide SOIC (EIAJ)
- Lead Finish: NiPdAu (Lead-free/Halide-free/RoHS Compliant)
- Package Drawing: 8S2
Features
- High-Speed Operation: Supports RapidS™ operation up to 100 MHz and SPI operation up to 85 MHz.
- Flexible Erase Architecture: Uniform 4-Kbyte, 32-Kbyte, and 64-Kbyte block erase options, as well as full chip erase.
- Individual Sector Protection: 16 sectors of 64-Kbytes each with hardware-controlled locking via the WP pin.
- Sector Lockdown: Permanently lock down any combination of 64-Kbyte sectors to make them read-only.
- OTP Security Register: 128-byte programmable OTP security register for unique device serialization, ESN storage, and locked key storage.
- Fast Program and Erase Times:Page Program (256 Bytes): 1.0 ms typical4-Kbyte Block Erase: 50 ms typical32-Kbyte Block Erase: 250 ms typical64-Kbyte Block Erase: 400 ms typical
- Low Power Dissipation:Active Read Current: 5 mA typical at 20 MHzDeep Power-Down Current: 5 µA typical
- Endurance: 100,000 program/erase cycles
- Data Retention: 20 years
- Compliance: Full industrial temperature range, RoHS compliant
Ordering Information
- Ordering Code: AT25DF081A-SH-T
- Shipping Carrier Option: Tape and reel
- Package Type: 8-lead, 0.208" wide SOIC (EIAJ)
- Lead Finish: NiPdAu
- Operating Voltage: 2.7V to 3.6V
- Maximum Frequency: 100 MHz (RapidS Operation), 85 MHz (SPI Operation)
- Temperature Range: Industrial (-40°C to +85°C)
Pin Descriptions
- CS (Chip Select): Asserting the CS pin selects the device. When deasserted, the device is deselected and placed in standby mode.
- SCK (Serial Clock): Provides the clock signal for data transfer.
- SI (Serial Input): Used to shift data into the device, including command and address sequences.
- SO (Serial Output): Used to shift data out from the device.
- WP (Write Protect): Controls hardware locking of protected sectors. Internally pulled high; can be left floating but should be externally connected to VCC if hardware protection is used.
- HOLD: Temporarily pauses serial communication without deselecting or resetting the device. Internally pulled high; can be left floating but should be externally connected to VCC if the Hold function is used.
Memory Organization
- Total Capacity: 8-megabit (1MB)
- Block Sizes:4-Kbyte blocks32-Kbyte blocks64-Kbyte blocks
- Sectors: 16 sectors of 64-Kbytes each
Commands and Operations
- Read Commands: Read Array (1Bh, 0Bh, 03h), Dual-Output Read Array (3Bh)
- Program and Erase Commands: Byte/Page Program (02h), Dual-Input Byte/Page Program (A2h), Block Erase (20h, 52h, D8h), Chip Erase (60h, C7h)
- Protection Commands: Write Enable (06h), Write Disable (04h), Protect Sector (36h), Unprotect Sector (39h), Global Protect/Unprotect, Sector Lockdown (33h), Freeze Sector Lockdown State (34h)
- Security Commands: Program OTP Security Register (9Bh), Read OTP Security Register (77h)
- Status Register Commands: Read Status Register (05h), Write Status Register Byte 1 (01h), Write Status Register Byte 2 (31h)
- Miscellaneous Commands: Reset (F0h), Read Manufacturer and Device ID (9Fh), Deep Power-Down (B9h), Resume from Deep Power-Down (ABh)
Electrical Specifications
- Absolute Maximum Ratings:Operating Temperature: -55°C to +125°CStorage Temperature: -65°C to +150°CInput Voltage: -0.6V to +4.1VOutput Voltage: -0.6V to VCC + 0.5V
- DC Characteristics:Standby Current (ISB): 25 µA to 50 µADeep Power-Down Current (IDPD): 5 µA to 10 µAActive Current (ICC1): 17 mA to 20 mA at 100 MHzActive Current (ICC2): 10 mA to 15 mA during program operationActive Current (ICC3): 12 mA to 18 mA during erase operation
- AC Characteristics:Maximum Clock Frequency: 100 MHz (RapidS), 85 MHz (SPI)Clock High Time (tCLKH): 4.3 nsClock Low Time (tCLKL): 4.3 nsData In Setup Time (tDS): 2 nsData In Hold Time (tDH): 1 nsOutput Valid Time (tV): 5 nsOutput Hold Time (tOH): 2 ns
Packaging Dimensions (8S2 - EIAJ SOIC)
- Body Size: 7.70 mm to 8.26 mm (width)
- Lead Length: 5.18 mm to 5.40 mm
- Lead Width: 1.27 mm (Basic Size)
- Lead Thickness: 0.35 mm to 0.48 mm
Revision History
- 8715F (2/2022): Changed company logo to Renesas.
- 8715E (11/2017): Added patent information.
- 8715D (8/2017): Updated corporate address.
- 8715C (1/2013): Update to Adesto logos, abbreviated title to SPI.
- 8715B (8/2010): Changed tRDPD Max from 10 to 30 in AC Parameters.
- 8715A (6/2010): Initial document release.
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Adesto Technologies