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BYTe Semiconductor BY25Q32CSSIG(T)
- Part Number:
BY25Q32CSSIG(T)
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- RoHs:
RoHS Compliant - Datasheet:
BY25Q32CSSIG(T)_Datesheet - Description:
32 MBIT, 3.0V (2.7V TO 3.6V), -4
- In stock 0
Product Information Summary for BY25Q32CSSIG(T)
General Description
The BY25Q32CSSIG is a 32M-bit Serial Peripheral Interface (SPI) Flash memory device designed for high-speed data transfer and reliable storage. It supports various SPI modes, including Standard, Dual, Quad, and QPI, offering flexibility and compatibility with different system architectures.
Key Features
- High-speed data transfer rates up to 108 MHz
- Flexible architecture with 4KB sectors and 32/64KB blocks
- Low power consumption with 25 µA maximum active current and 5 µA maximum power-down current
- Software and hardware write protection
- Wide operating voltage range of 2.7V to 3.6V
- Commercial and industrial temperature ranges (0°C to +70°C, -40°C to +85°C, -40°C to +105°C)
- Typical 100k program-erase cycles and 20-year data retention
Applications
- Embedded systems
- IoT devices
- Automotive electronics
- Industrial control systems
Ordering Information
- Package Type: SOP8 150mil
- Product Number: BY25Q32CSSIG
- Temperature Range: -40°C to +85°C
- Voltage Range: 2.7V to 3.6V
Pin Configuration
TableCopy
| Pin | Symbol | Description |
|---|---|---|
| 1 | /CS | Chip Select |
| 2 | SI | Serial Input |
| 3 | SCLK | Serial Clock |
| 4 | /WP | Write Protect |
| 5 | /HOLD | Hold (Pause) |
| 6 | VCC | Power Supply |
| 7 | GND | Ground |
| 8 | SO | Serial Output |
Electrical Characteristics
Absolute Maximum Ratings
- Supply Voltage (VCC): -0.5V to 4V
- Voltage Applied to Any Pin (VIO): -0.5V to 4V
- Transient Voltage on any Pin (VIOT): -2.0V to VCC+2.0V
- Storage Temperature (TSTG): -65°C to +150°C
- Electrostatic Discharge Voltage (VESD): ±2000V (Human Body Model)
Operating Ranges
- Supply Voltage (VCC): 2.7V to 3.6V
- Temperature (TA):Commercial: 0°C to +70°CIndustrial: -40°C to +85°CExtended Industrial: -40°C to +105°C
Performance Specifications
- Clock Frequency (Fc): Up to 108 MHz
- Read Data Instruction Frequency (fR): Up to 55 MHz
- Page Program Time (tPP): 0.6 ms typical
- Sector Erase Time (tSE): 50 ms typical
- Block Erase Time (tBE): 0.15/0.25 s typical
- Chip Erase Time (tCE): 15 s typical
Package Information
- Package Type: SOP8 150mil
- Dimensions: Refer to the datasheet for detailed dimensions.
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BYTe Semiconductor
BYTe Semiconductor