Central Semiconductor Corp CMLDM7002AG TR PBFREE

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  • Part Number:

    CMLDM7002AG TR PBFREE

  • Manufacturer:

    Central Semiconductor Corp

  • Category:

    FET, MOSFET Arrays

  • RoHs:

    rohs RoHS Compliant

  • Datasheet:

    pdf CMLDM7002AG TR PBFREE_Datesheet

  • Description:

    MOSFET 2N-CH 60V 0.28A SOT563

  • In stock 1,742
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Specifications
Type
Paramete
Type
Paramete
Supplier Device Package
SOT-563
Configuration
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs
0.59nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 25V
FET Feature
-
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
280mA
Package / Case
SOT-563, SOT-666
Technology
MOSFET (Metal Oxide)
Operating Temperature
-65°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id
2.5V @ 250µA
Mounting Type
Surface Mount
Qualification
-
Power - Max
350mW
Rds On (Max) @ Id, Vgs
2Ohm @ 500mA, 10V
Grade
-
Overview

DESCRIPTION

· Dual N-Channel enhancement-mode MOSFETs manufactured by the N-Channel DMOS Process.

· Designed for high-speed pulsed amplifier and driver applications.

· CMLDM7002A uses USA pinout configuration, CMLDM7002AJ uses Japanese pinout configuration.

· Offers low rDS(ON) and low VDS(ON).



FEATURES

· Maximum Drain-Source Voltage (VDS): 60V.

· Maximum Gate-Source Voltage (VGS): 40V.

· Continuous Drain Current (ID): 280mA.

· Maximum Pulsed Drain Current (IDM): 1.5A.

· Power Dissipation (PD): 350mW (ceramic/aluminum core), 300mW (FR-4 epoxy), 150mW (FR-4 epoxy with smaller pad).

· Operating and Storage Junction Temperature (TJ, Tstg): -65°C to +150°C.

· Thermal Resistance (ΘJA): 357°C/W.



APPLICATIONS

· High-speed pulsed amplifiers.

· Driver applications.



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