Name: EPC2101
Brand: EPC
SKU: JM-EPC2101
Availability: InStock

EPC EPC2101

View All FET, MOSFET Arrays by EPC

Part Number:
EPC2101
Manufacturer:
EPC
Category:
FET, MOSFET Arrays
RoHs:
RoHS Compliant
Datasheet:
EPC2101_Datesheet
Description:
GANFET 2N-CH 60V 9.5A/38A DIE
In stock 533

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Specifications

Type

Paramete

Type

Paramete

Drain to Source Voltage (Vdss)

60V

Rds On (Max) @ Id, Vgs

11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V

Technology

GaNFET (Gallium Nitride)

Mounting Type

Surface Mount

Package / Case

Die

Input Capacitance (Ciss) (Max) @ Vds

300pF @ 30V, 1200pF @ 30V

Operating Temperature

-40°C ~ 150°C (TJ)

Power - Max

Vgs(th) (Max) @ Id

2.5V @ 3mA, 2.5V @ 12mA

FET Feature

Gate Charge (Qg) (Max) @ Vgs

2.7nC @ 5V, 12nC @ 5V

Current - Continuous Drain (Id) @ 25°C

9.5A, 38A

Grade

Configuration

2 N-Channel (Half Bridge)

Qualification

Supplier Device Package

Die

Overview

DESCRIPTION

· EPC2101 eGaN® ICs are enhancement-mode GaN power transistors in a half-bridge configuration, supplied in passivated die form with solder bumps.
· Die size: 6.05 mm x 2.3 mm.
· Designed for high-frequency DC-DC conversion and point-of-load (POL) converters.
· Utilizes Gallium Nitride's high electron mobility and low temperature coefficient for low RDS(on), low QG, and zero QRR.

FEATURES

· High frequency operation capability.
· Ultra-high efficiency performance.
· Compact, high-density footprint.
· Low on-state losses and high switching frequency suitability.
· Robust thermal characteristics with specified thermal resistance values.

APPLICATIONS

· High frequency DC-DC converters.
· Point-of-Load (POL) converters.
· Systems requiring high efficiency and compact power solutions.

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