EPC EPC2101ENGRT

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  • Part Number:

    EPC2101ENGRT

  • Manufacturer:

    EPC

  • Category:

    FET, MOSFET Arrays

  • RoHs:

    rohs RoHS Compliant

  • Datasheet:

    pdf EPC2101ENGRT_Datesheet

  • Description:

    GANFET 2N-CH 60V 9.5A/38A DIE

  • In stock 0
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Specifications
Type
Paramete
Type
Paramete
Supplier Device Package
Die
Grade
-
Drain to Source Voltage (Vdss)
60V
Vgs(th) (Max) @ Id
2.5V @ 2mA
Technology
GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C
9.5A, 38A
Qualification
-
Mounting Type
Surface Mount
Gate Charge (Qg) (Max) @ Vgs
2.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
300pF @ 30V
Configuration
2 N-Channel (Half Bridge)
Power - Max
-
Rds On (Max) @ Id, Vgs
11.5mOhm @ 20A, 5V
Package / Case
Die
FET Feature
-
Operating Temperature
-40°C ~ 150°C (TJ)
Overview

DESCRIPTION

· The EPC2101 eGaN® FET is a high-performance enhancement-mode GaN power transistor designed for efficient power conversion.

· It features a lateral device structure with majority carrier diode, enabling very low RDS(on), QG, and zero QRR.

· The device is supplied in passivated die form with solder bumps, measuring 6.05 mm x 2.3 mm.



FEATURES

· Exceptionally high electron mobility and low temperature coefficient for low RDS(on).

· Capable of handling high switching frequencies and low on-time tasks.

· Suitable for applications where on-state losses dominate.

· Maximum continuous drain-to-source voltage of 60 V for both Q1 and Q2.

· Continuous drain current of 10 A (Q1) and 40 A (Q2) at 25°C.

· Operating and storage temperature range from -40 to 150°C.



APPLICATIONS

· High Frequency DC-DC converters.

· Point-of-Load (POL) Converters.

· Applications requiring high frequency operation, ultra-high efficiency, and high-density footprint.



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