EPC EPC2110

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  • Part Number:

    EPC2110

  • Manufacturer:

    EPC

  • Category:

    FET, MOSFET Arrays

  • RoHs:

    rohs RoHS Compliant

  • Datasheet:

    pdf EPC2110_Datesheet

  • Description:

    GANFET 2N-CH 120V 3.4A DIE

  • In stock 12,490
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Specifications
Type
Paramete
Type
Paramete
Current - Continuous Drain (Id) @ 25°C
3.4A
Vgs(th) (Max) @ Id
2.5V @ 700µA
FET Feature
-
Supplier Device Package
Die
Technology
GaNFET (Gallium Nitride)
Operating Temperature
-40°C ~ 150°C (TJ)
Power - Max
-
Gate Charge (Qg) (Max) @ Vgs
0.8nC @ 5V
Package / Case
Die
Rds On (Max) @ Id, Vgs
60mOhm @ 4A, 5V
Drain to Source Voltage (Vdss)
120V
Input Capacitance (Ciss) (Max) @ Vds
80pF @ 60V
Mounting Type
-
Grade
-
Configuration
2 N-Channel (Dual) Common Source
Qualification
-
Overview

DESCRIPTION

· EPC2110 eGaN® FET is a dual common-source enhancement-mode GaN power transistor.

· It features exceptionally high electron mobility and low temperature coefficient, enabling very low RDS(on).

· The lateral device structure and majority carrier diode provide ultra-low QG and zero QRR.

· Suitable for applications requiring very high switching frequency and low on-time, as well as those dominated by on-state losses.

· Supplied in passivated die form with solder bumps, die size: 1.35 mm x 1.35 mm.



FEATURES

· Ultra high efficiency.

· Ultra low RDS(on) (80-110 mΩ).

· Ultra low QG.

· Ultra small footprint.

· Maximum VDS of 120 V and continuous ID of 3.4 A.

· Operating temperature range: -40 to 150°C.



APPLICATIONS

· Ultra high frequency DC-DC conversion.

· Wireless power transfer.

· Synchronous rectification.



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