Infineon Technologies FS03MR12A6MA1LB

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  • Part Number:

    FS03MR12A6MA1LB

  • Manufacturer:

    Infineon Technologies

  • Category:

    FET, MOSFET Arrays

  • RoHs:

    rohs RoHS Compliant

  • Datasheet:

    pdf FS03MR12A6MA1LB_Datesheet

  • Description:

    SIC 6N-CH 1200V AG-HYBRIDD

  • In stock 0
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Specifications
Type
Paramete
Type
Paramete
Package / Case
Module
Gate Charge (Qg) (Max) @ Vgs
1320nC @ 15V
Qualification
-
Configuration
6 N-Channel (3-Phase Bridge)
Grade
-
Power - Max
-
Supplier Device Package
AG-HYBRIDD-2
Vgs(th) (Max) @ Id
5.55V @ 240mA
FET Feature
-
Operating Temperature
-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
3.7mOhm @ 400A, 15V
Current - Continuous Drain (Id) @ 25°C
400A
Technology
Silicon Carbide (SiC)
Input Capacitance (Ciss) (Max) @ Vds
42600pF @ 600V
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Mounting Type
Chassis Mount
Overview

DESCRIPTION

· HybridPACK™ Drive module with CoolSiC™ Automotive MOSFET
· Qualified according to AQG 324, release no.: 03.1/2021
· Datasheet revision 1.10, 2022-07-19



FEATURES

· Electrical: 1200V V DSS, 400A ID,nom, silicon carbide material, low R DS,on, low switching losses, low Q g and C rss, low inductive design <10nH, 150°C T vj,op
· Mechanical: 4.2kV DC insulation, high creepage/clearance, compact design, high power density, PinFin base plate, Si3N4 ceramic, PCB/cooler guides, integrated NTC, PressFIT contacts, RoHS compliant, UL 94 V0 frame



APPLICATIONS

· Automotive systems
· Hybrid and electric vehicles (H)EV
· Motor drives
· Commercial agriculture vehicles



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